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Schematic representation of the conduction band of the THz source.
Transmission coefficient (solid line) and tunneling time (dotted line) for an ARTD fabricated in a InAlAs/InGaAs heterostructure. The quantum well is 4-nm-wide and the barriers have 2 nm and 4 nm, respectively.
The train of pulses generated by a 40-nm-long BEWAS cavity surrounded by two ARTD described in Fig. 2 .
The Fourier transform of the first pulse in Fig. 3 .
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