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Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires
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10.1063/1.3465327
/content/aip/journal/jap/108/2/10.1063/1.3465327
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3465327
/content/aip/journal/jap/108/2/10.1063/1.3465327
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/content/aip/journal/jap/108/2/10.1063/1.3465327
2010-07-29
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoheteroepitaxy of gallium arsenide on strain-compliant silicon–germanium nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3465327
10.1063/1.3465327
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