1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal–dielectric interface toughening by molecular nanolayer decomposition
Rent:
Rent this article for
USD
10.1063/1.3437648
/content/aip/journal/jap/108/3/10.1063/1.3437648
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3437648
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Ratios of and band intensities normalized to the substrate intensity plotted as a function of photoelectron take-off angle as illustrated in the inset. (b) Core level and subbands. The inset in the bottom graph shows a magnified portion of the subband arising from interactions in the benzene ring.

Image of FIG. 2.
FIG. 2.

(a) Fracture toughness of Cu/MNL/ interfaces with BTCG, Bu-TCG, and BTCS MNLs annealed at different temperatures in vacuum. Schematic sketches capture the loading geometry and the sandwich structure (inset), and the structure of the molecules. (b) System energy as a function of separation for different molecules, determined from DFT calculations. In each case the X–O–Si bond was stretched, where X represents different molecular moieties shown in the figure.

Image of FIG. 3.
FIG. 3.

Core-level spectra obtained by XPS from copper and silica fracture surfaces of Cu/BTCG/ structures annealed to different temperatures, in the vicinity of (a) and (b) bands. Schematic sketches capture salient aspects of fracture location and BTCG degradation at Cu/BTCG/ interfaces.

Image of FIG. 4.
FIG. 4.

(a) TOF-SIMS depth profiles from as-prepared (top) Ta/Cu/BTCG//Si sample stacks those annealed at (below), depicting Ge spreading at the interface. (b) High resolution TOF-SIMS mass spectra obtained in the vicinity of and from Cu and silica fractured surfaces from annealed samples.

Image of FIG. 5.
FIG. 5.

(a) Cross-section TEM micrograph from Ta/Cu/BTCG//Si stacks showing inorganic phase formation at interface upon vacuum annealing at . (b) Diffraction patterns from regions in the silica layer such as indicated by the arrow correspond to . (c) Cross-section TEM micrograph from Ta/Cu/organosilane//Si annealed at in vacuum. (d) Energy dispersive x-ray spectra from different regions of the inorganic phase support silicate phase formation.

Loading

Article metrics loading...

/content/aip/journal/jap/108/3/10.1063/1.3437648
2010-08-09
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal–dielectric interface toughening by molecular nanolayer decomposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3437648
10.1063/1.3437648
SEARCH_EXPAND_ITEM