(a) Ratios of and band intensities normalized to the substrate intensity plotted as a function of photoelectron take-off angle as illustrated in the inset. (b) Core level and subbands. The inset in the bottom graph shows a magnified portion of the subband arising from interactions in the benzene ring.
(a) Fracture toughness of Cu/MNL/ interfaces with BTCG, Bu-TCG, and BTCS MNLs annealed at different temperatures in vacuum. Schematic sketches capture the loading geometry and the sandwich structure (inset), and the structure of the molecules. (b) System energy as a function of separation for different molecules, determined from DFT calculations. In each case the X–O–Si bond was stretched, where X represents different molecular moieties shown in the figure.
Core-level spectra obtained by XPS from copper and silica fracture surfaces of Cu/BTCG/ structures annealed to different temperatures, in the vicinity of (a) and (b) bands. Schematic sketches capture salient aspects of fracture location and BTCG degradation at Cu/BTCG/ interfaces.
(a) TOF-SIMS depth profiles from as-prepared (top) Ta/Cu/BTCG//Si sample stacks those annealed at (below), depicting Ge spreading at the interface. (b) High resolution TOF-SIMS mass spectra obtained in the vicinity of and from Cu and silica fractured surfaces from annealed samples.
(a) Cross-section TEM micrograph from Ta/Cu/BTCG//Si stacks showing inorganic phase formation at interface upon vacuum annealing at . (b) Diffraction patterns from regions in the silica layer such as indicated by the arrow correspond to . (c) Cross-section TEM micrograph from Ta/Cu/organosilane//Si annealed at in vacuum. (d) Energy dispersive x-ray spectra from different regions of the inorganic phase support silicate phase formation.
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