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Schematic illustrations and typical SEM images of the formation of (a) Ga droplets and (b) GaP core NWs.
(a) Schematic illustrations of GaInP/GaInP/GaP core-shell double heterostructure NW [sample (A)], GaInP/GaP core-shell NW [sample (B)], and GaP core NW [sample (C)]. (b) SEM and (c) side-view XTEM images of the sample (A). An inset of (b) is the top-view SEM of the sample (A). (d) side-view HR-XTEM image of GaInP double heterostructures in (c). (e) top-view HR-XTEM image of the sample (A). (f) XEDS line scan of the sample (A) along a horizontal axis with a side-view HR-XTEM image.
(a) Digital camera images of the sample (A) measured at 77 K with an excitation by a 6 mW blue 403 nm semiconductor lasers through a high-pass filter which cuts the signal below 420 nm. An inset is the image without the high-pass filter. (b) PL spectra at 77 K of three samples [samples (A)–(C)] before the passivation process.
(a) PL spectra at 77 K of the sample (A) before the passivation process at different pump power densities ranging from to 6 mW. (b) Peak intensities of the PL peak at 640 nm and 805 nm vs incident pump powers.
PL spectra at 77 K of the sample (A) before and after the passivation process.
Growth conditions (mole flow of TMG, TMI, or TBP, and V/III ratio) of each layer (Ga droplets, GaP core, and GaInP heterostructures).
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