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Effect of pre-existing disorder on surface amorphization in GaN
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10.1063/1.3462380
/content/aip/journal/jap/108/3/10.1063/1.3462380
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3462380
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Figures

Image of FIG. 1.
FIG. 1.

Depth profiles of relative disorder in GaN bombarded at RT by 40 keV P ions without (a) and with (b) surface amorphous layers created by preirradiation with 40 keV cluster ions to a dose of . Implantation doses (in ) are indicated. A comparison of damage profiles (with and without preirradiation) for a P ion dose of is shown in (c). The damage profile produced by preirradiation with cluster ions is shown in (b) and (c) by solid lines. The profile of lattice vacancies (with an arbitrary vertical scale) generated by 40 keV P ions, as predicted by TRIM simulations, is also shown by dashed lines.

Image of FIG. 2.
FIG. 2.

A comparison of damage profiles in GaN bombarded at RT by 100 keV P ions to an ion dose of without and with surface amorphous layers created by preirradiation with 25 keV cluster ions to an ion dose of . The profile of lattice vacancies (with an arbitrary vertical scale) generated by 100 keV P ions, as predicted by TRIM simulations, is also shown by a dashed line.

Image of FIG. 3.
FIG. 3.

Depth profile of relative disorder (extracted from RBS/C spectra) in GaN with a pre-existing surface amorphous layer bombarded at RT with 40 keV P ions to an ion dose of . The model defect profile and its convolution reflecting experimental smearing are shown by solid and dashed lines, respectively.

Image of FIG. 4.
FIG. 4.

(a) Thickness of the surface amorphous layer and (b) the rate of surface amorphization (closed symbols) and the damage level at the a/c interface (open symbols) as a function of DPA at the sample surface for bombardment of GaN with 40 keV ions with and without preirradiation by 40 keV cluster ions to an ion dose of .

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/content/aip/journal/jap/108/3/10.1063/1.3462380
2010-08-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of pre-existing disorder on surface amorphization in GaN
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3462380
10.1063/1.3462380
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