Sketch of the reversely biased -structure operated in the external circuit.
Voltage (upper panel) and current (lower panel) during the switching process for different voltage ramps , 1, and 5 kV/ns (curves 1, 2, and 3, respectively).
The spatial profiles of the electrical field and electron and hole concentrations and in the -base at different times: (a) increase in the free carrier concentration due to the field-enhanced ionization of deep-level impurities and subsequent avalanche multiplication at times , 2.295, and 2.31 ns (curves 1, 2, and 3, respectively); (b) propagation of impact ionization fronts at , 2.325, 2.335, 2.345, and 2.355 ns (curves 1, 2, 3, 4, and 5, repectively). Numerical parameters as in Fig. 2 for .
The spatial profile of electron concentrations in the propagating front at times , 2.325, and 2.335 ns (curves 1, 2, and 3, respectively) in logarithmic scale. Numerical parameters as in Fig. 3.
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