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The effects of Schottky barrier profile on spin dependent tunneling in a ferromagnet-insulator-semiconductor system
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10.1063/1.3466772
/content/aip/journal/jap/108/3/10.1063/1.3466772
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3466772
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of a FM/I/SC system with a Schottky barrier in the SC region. The parameters depicted in the diagram are: band offset at the FM/I interface, band offset at the I/SC interface, barrier height, potential, , level, bias, and and of the FM, I, and depletion region, respectively.

Image of FIG. 2.
FIG. 2.

Calculated current density as a function of applied bias voltage, , when the following parameters are varied: (a) FM/I conduction band offset, , (b) Schottky barrier height, , (c) doping density in the SC layer, , and (d) built-in potential, .

Image of FIG. 3.
FIG. 3.

Calculated spin polarization as a function of applied bias voltage, , when the following parameters are varied: (a) FM/I conduction band offset, , (b) Schottky barrier height, , (c) doping density in the SC layer, , and (d) built-in potential, .

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/content/aip/journal/jap/108/3/10.1063/1.3466772
2010-08-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effects of Schottky barrier profile on spin dependent tunneling in a ferromagnet-insulator-semiconductor system
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3466772
10.1063/1.3466772
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