Room temperature EL spectra of the as-grown QDLEDs measured at . The legend indicates the nature of the capping layer.
Room temperature external efficiency as a function of the injected current. Solid symbols indicate as-grown devices, whereas hollow symbols indicate annealed devices. The legend indicates the nature of the capping layer in each case.
Normalized room temperature EL spectra of the InAs/InGaAs (a) and InAs/GaInNAs (b) devices measured at . A thin black line indicates as-grown devices, whereas a thick red line indicates annealed devices. Annealing-induced blueshifts in the different transitions are indicated.
Low temperature EL spectra of the InAs/InGaAs (a) and InAs/GaInNAs (b) QDLEDs as a function of the injected current from 16 to .
Peak energy and integrated intensity of the EL emissions of Fig. 4. Black circles represent the lowest energy peak, green squares the second peak and purple diamonds the third peak in case it is present in the spectra.
Arrhenius plot of the integrated EL intensity against the inverse of the temperature for the GS transition of the InAs/InGaAs and InAs/GaInNAs QDLEDs (squares and circles, respectively) both as-grown and annealed. The solid lines correspond to linear fits in the strong quenching regime, whereas the dashed and dotted lines are a guide to the eye.
EL Peak energy as a function of temperature for the InAs/InGaAs (top) and the InAs/GaInNAs (bottom) annealed QDLEDs. The dotted lines represent Varshni fits to the experimental data.
Activation energy in meV for the quenching of the GS transition of the InAs/InGaAs and InAs/GaInNAs QDLEDs, both as-grown and annealed.
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