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External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
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10.1063/1.3467004
/content/aip/journal/jap/108/3/10.1063/1.3467004
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3467004

Figures

Image of FIG. 1.
FIG. 1.

Room temperature EL spectra of the as-grown QDLEDs measured at . The legend indicates the nature of the capping layer.

Image of FIG. 2.
FIG. 2.

Room temperature external efficiency as a function of the injected current. Solid symbols indicate as-grown devices, whereas hollow symbols indicate annealed devices. The legend indicates the nature of the capping layer in each case.

Image of FIG. 3.
FIG. 3.

Normalized room temperature EL spectra of the InAs/InGaAs (a) and InAs/GaInNAs (b) devices measured at . A thin black line indicates as-grown devices, whereas a thick red line indicates annealed devices. Annealing-induced blueshifts in the different transitions are indicated.

Image of FIG. 4.
FIG. 4.

Low temperature EL spectra of the InAs/InGaAs (a) and InAs/GaInNAs (b) QDLEDs as a function of the injected current from 16 to .

Image of FIG. 5.
FIG. 5.

Peak energy and integrated intensity of the EL emissions of Fig. 4. Black circles represent the lowest energy peak, green squares the second peak and purple diamonds the third peak in case it is present in the spectra.

Image of FIG. 6.
FIG. 6.

Arrhenius plot of the integrated EL intensity against the inverse of the temperature for the GS transition of the InAs/InGaAs and InAs/GaInNAs QDLEDs (squares and circles, respectively) both as-grown and annealed. The solid lines correspond to linear fits in the strong quenching regime, whereas the dashed and dotted lines are a guide to the eye.

Image of FIG. 7.
FIG. 7.

EL Peak energy as a function of temperature for the InAs/InGaAs (top) and the InAs/GaInNAs (bottom) annealed QDLEDs. The dotted lines represent Varshni fits to the experimental data.

Tables

Generic image for table
Table I.

Activation energy in meV for the quenching of the GS transition of the InAs/InGaAs and InAs/GaInNAs QDLEDs, both as-grown and annealed.

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/content/aip/journal/jap/108/3/10.1063/1.3467004
2010-08-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: External efficiency and carrier loss mechanisms in InAs/GaInNAs quantum dot light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3467004
10.1063/1.3467004
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