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Investigation of the roles of gas-phase molecules and F atoms during fluorocarbon plasma processing of Si and substrates
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10.1063/1.3467776
/content/aip/journal/jap/108/3/10.1063/1.3467776
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3467776

Figures

Image of FIG. 1.
FIG. 1.

Raw OES spectra of (a) and (b) plasmas . Actinometry data for and species as a function of for (c) and (d) systems without substrates.

Image of FIG. 2.
FIG. 2.

Actinometric OES data for and in (a) , (b) , (c) , and (d) systems. In all cases, substrates were placed 14 cm downstream from the reactor coil.

Image of FIG. 3.
FIG. 3.

(a) Fluorescence excitation spectrum showing the (0,11,0)—(0,0,0) vibronic band of the transition at 234.28 nm for formed in a plasma with . (b) LIF intensities as a function of for formed in (closed circles) and (open circles) plasma molecular beams.

Image of FIG. 4.
FIG. 4.

(a) LIF images collected during IRIS experiments for formed in a plasma molecular beam (incident beam) and with a substrate rotated into the same molecular beam, showing both in the incident beam and scattered from the substrate (beam and scatter). The image on the right (scatter) arises from image subtraction yielding a spot representing scattering from the system . (b) The images in (a) are converted to cross sections along the laser beam for LIF signals in the incident beam and scattered from the surface, along with simulated data (dashed lines) for this system. The best fit to this data set yields .

Image of FIG. 5.
FIG. 5.

(a) High-resolution XPS spectrum of a Si wafer processed in an IRIS experiment with a 50 W plasma molecular beam. (b) High-resolution XPS spectrum of the same wafer. (c) High-resolution spectrum of a wafer processed in an IRIS experiment under similar conditions.

Image of FIG. 6.
FIG. 6.

High-resolution XPS (a) and (b) spectra of a Si substrate processed in the IRIS system using a plasma molecular beam with . A high-resolution spectrum is shown in (c) for a Si substrate processed under similar conditions using a plasma.

Image of FIG. 7.
FIG. 7.

Depiction of the processes by which major gas-phase species in and FC plasmas contribute to FC film deposition and etching of Si and .

Image of FIG. 8.
FIG. 8.

Comparison of and corresponding mean ion energies in and along with corresponding data from and plasmas published previously (Ref. 35). The line is a linear regression fit to all of the data .

Tables

Generic image for table
Table I.

Mean ion energies (eV) for in FC plasmas. Values in parentheses represent one standard deviation from the mean of three trials.

Generic image for table
Table II.

Surface scatter coefficients for different plasma/surface combinations. Values in parentheses are error estimates based on the error in the simulated fits to the data and includes several replicates of the data. Error estimates for data collected at 75 and 125 W are based solely on the error in the simulated fits to one data set.

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/content/aip/journal/jap/108/3/10.1063/1.3467776
2010-08-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the roles of gas-phase CF2 molecules and F atoms during fluorocarbon plasma processing of Si and ZrO2 substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/3/10.1063/1.3467776
10.1063/1.3467776
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