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Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
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10.1063/1.3462394
/content/aip/journal/jap/108/4/10.1063/1.3462394
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3462394
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical PAS data for the bulk ZnO reference sample and MOVPE-ZnO/ structure grown at . W and S parameters vs energy profiles are shown in panels (a) and (b), respectively, while panel (c) is the normalized to the bulk (S, W) plot.

Image of FIG. 2.
FIG. 2.

W-S plot for MOVPE-ZnO synthesized at different temperatures. The reference annihilation states (bulk and ) are labeled by open squares. Open circles denote (S, W) trend points revealed in previous ion implantation experiments.

Image of FIG. 3.
FIG. 3.

PL spectra at 10 K for MOVPE-ZnO films grown at different temperatures . Gaussian dotted curves are guides for eyes indicating two dominant deep-level emission components. The inset shows the evolution of the total PL yield integrated over entire emission spectrum as a function of growth temperature.

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/content/aip/journal/jap/108/4/10.1063/1.3462394
2010-08-25
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Changing vacancy balance in ZnO by tuning synthesis between zinc/oxygen lean conditions
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3462394
10.1063/1.3462394
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