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Modeling high power light-emitting diode spectra and their variation with junction temperature
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10.1063/1.3463411
/content/aip/journal/jap/108/4/10.1063/1.3463411
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3463411

Figures

Image of FIG. 1.
FIG. 1.

Experimental spectra of LED R1 at two different junction temperatures.

Image of FIG. 2.
FIG. 2.

Experimental spectra of LED R1 on a logarithmic scale and with frequency as main variable. The dashed lines show the Boltzmann exponential behavior.

Image of FIG. 3.
FIG. 3.

The solid line (a) corresponds with the measured spectrum. The line (b) represents the spectrum model according to Eq. (2), while the line (c) represents the Gaussian fit of the difference between (a) and (b). The dashed line (d) is the simulated spectrum according to the model of Eq. (3).

Image of FIG. 4.
FIG. 4.

Carrier temperature variation with junction temperature for the solid lines, dashed lines, and dotted-dashed lines diodes. Squares are used for LEDs from manufacturer 1, diamonds are used for devices from manufacturer 2.

Image of FIG. 5.
FIG. 5.

Peak frequency shift (squares) and shift in (diamonds) with junction temperature for the LED R1. The dashed lines represent linear fits.

Image of FIG. 6.
FIG. 6.

Radiant flux variation with junction temperature of LED R1 for the complete spectrum (squares), (diamonds), (triangles), and (inverted triangles). The dashed lines represent exponential fits with the same characteristic temperature.

Image of FIG. 7.
FIG. 7.

Comparison of measured and simulated spectra for LED R1 at 340 K, starting from a reference spectrum measured at 300 K. The solid line (b) is the measured spectrum at 340 K, while the dashed line (c) is the simulated single color spectrum.

Tables

Generic image for table
Table I.

Experimental peak frequencies and fitting parameters for all LEDs at . Coefficients of determination have been added for the Gaussian fits. For the exponential fits all values exceed 0.99.

Generic image for table
Table II.

Variation in carrier temperature , total spectrum’s peak frequency , and the Gaussian peak frequency with junction temperature, together with the characteristic temperature . values exceed 0.95 for all fits.

Generic image for table
Table III.

Comparison between measured and simulated flux and CIE color coordinates at 340 K.

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/content/aip/journal/jap/108/4/10.1063/1.3463411
2010-08-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling high power light-emitting diode spectra and their variation with junction temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3463411
10.1063/1.3463411
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