Schematic representation of the LECs fabricated.
Photoluminescence spectrum of sample with thickness of 96 nm. All the samples showed the same shape and maximum position.
Current vs applied EF response for a device with thickness of 96 nm. First measurement was performed to an as-fabricated device, and the second measurement was done to the same device after 6.5 MV/cm (electrical treatment) were applied to it.
Photography of a device showing EL dots in the gate. The white lines were digitally added to show the perimeter of the gate and the stimulation probe.
Photographs of a single device showing different color of FA-EL. The EF applied are (a) and (b). The EL is observed with the naked eye for both intensities.
Specimen of emission spectrum for EL dots. The spectra show no difference in its form regardless the thickness of the active layer.
Spectra of FA-EL for one device with when excited with different EFs. The behavior was the same for all the devices, ruling out that the spectra shape is result of interference phenomena in the active layers.
Video of an LEC when increasing positive voltage applied to the gate and turning on and off of the device. (Video 1, enhanced online). [URL: http://dx.doi.org/10.1063/1.3465335.1]10.1063/1.3465335.1
Applied EF vs intensity of each of the two main emission peaks in FA-EL.
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