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Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors
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10.1063/1.3465335
/content/aip/journal/jap/108/4/10.1063/1.3465335
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3465335

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of the LECs fabricated.

Image of FIG. 2.
FIG. 2.

Photoluminescence spectrum of sample with thickness of 96 nm. All the samples showed the same shape and maximum position.

Image of FIG. 3.
FIG. 3.

Current vs applied EF response for a device with thickness of 96 nm. First measurement was performed to an as-fabricated device, and the second measurement was done to the same device after 6.5 MV/cm (electrical treatment) were applied to it.

Image of FIG. 4.
FIG. 4.

Photography of a device showing EL dots in the gate. The white lines were digitally added to show the perimeter of the gate and the stimulation probe.

Image of FIG. 5.
FIG. 5.

Photographs of a single device showing different color of FA-EL. The EF applied are (a) and (b). The EL is observed with the naked eye for both intensities.

Image of FIG. 6.
FIG. 6.

Specimen of emission spectrum for EL dots. The spectra show no difference in its form regardless the thickness of the active layer.

Image of FIG. 7.
FIG. 7.

Spectra of FA-EL for one device with when excited with different EFs. The behavior was the same for all the devices, ruling out that the spectra shape is result of interference phenomena in the active layers.

Image of FIG. 8.
FIG. 8.

Video of an LEC when increasing positive voltage applied to the gate and turning on and off of the device. (Video 1, enhanced online). [URL: http://dx.doi.org/10.1063/1.3465335.1]10.1063/1.3465335.1

Image of FIG. 9.
FIG. 9.

Applied EF vs intensity of each of the two main emission peaks in FA-EL.

video/mp4,video/x-flv,video/flv,audio.mp3,audio.mpeg

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/content/aip/journal/jap/108/4/10.1063/1.3465335
2010-08-24
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3465335
10.1063/1.3465335
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