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The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
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10.1063/1.3471812
/content/aip/journal/jap/108/4/10.1063/1.3471812
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3471812
/content/aip/journal/jap/108/4/10.1063/1.3471812
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/content/aip/journal/jap/108/4/10.1063/1.3471812
2010-08-26
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3471812
10.1063/1.3471812
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