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The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
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10.1063/1.3471812
/content/aip/journal/jap/108/4/10.1063/1.3471812
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3471812

Figures

Image of FIG. 1.
FIG. 1.

Measured TE net modal gain spectra for a ridge at 350 K for a range of current densities. The modal loss spectrum is also shown. The horizontal dashed line marks the value of , obtained from where the spectra converge at low energy. The vertical dashed lines indicate the transition energy and the transparency energy for the gain curve (shown in bold). The injection-level at a drive current is given by the difference between and .

Image of FIG. 2.
FIG. 2.

(a). The peak net modal gain as a function of drive current density for the ground (open symbols) and excited state (solid symbols) at 350 K. The black triangles, red squares, and blue circles correspond to the 10, 6, and ridge widths. (b) The drive current density required for each ridge width to achieve a net modal gain of at 350 K. The graph is representative of the characteristic for 2.7 mm long shallow-etched ridge lasers with uncoated facets.

Image of FIG. 3.
FIG. 3.

The peak modal gain (g) as a function of drive current density for the ground (open symbols) and excited state transitions (solid symbols) at 350 K.

Image of FIG. 4.
FIG. 4.

The total radiative current density as a function of injection-level for the 10, 6, and ridges at 350 K. Inset: spontaneous emission rate spectra of the 10, 6, and ridges at injection-levels in the region of 52 and 122 meV.

Image of FIG. 5.
FIG. 5.

The peak modal gain as a function of carrier injection-level for the ground state (open symbols) and excited state (solid symbols) transitions at 350 K. Inset: modal gain spectra of the 10 (black) and (red) ridges at injection-levels of approximately 52, 104, and 122 meV. The (blue) ridge at approximately 122 meV is also shown.

Image of FIG. 6.
FIG. 6.

Carrier injection level as a function of drive current density for the (black triangles), (red squares), and (blue circles) at 350 K.

Image of FIG. 7.
FIG. 7.

Modal gain (g) spectra for the 10 (black), 6 (red), and (blue) devices at a , within error, of .

Image of FIG. 8.
FIG. 8.

Nonradiative current density associated with the (black triangles), (red squares), and (blue circles) width ridges as a function of carrier injection-level , at 350 K.

Image of FIG. 9.
FIG. 9.

Dependence of on ridge width at common injection-levels of 122 (solid) and 53 meV (open).

Image of FIG. 10.
FIG. 10.

Illustration of the current paths used in Eq. (2) and the coordinate system of the carrier diffusion model.

Image of FIG. 11.
FIG. 11.

The relation for the 10 (black triangles), 6 (red squares), and (blue circles) ridges at an injection-level of 122 meV and temperature of 350 K. The intercept of all three relations gives the lateral ambipolar diffusion length to be .

Image of FIG. 12.
FIG. 12.

The calculated relation for a of , along with the measured relation at an injection-level of 122 meV.

Image of FIG. 13.
FIG. 13.

Estimated lateral ambipolar diffusion length as a function of injection-level in the quantum-dot active region at 350 K.

Image of FIG. 14.
FIG. 14.

Internal quantum efficiency as a function of carrier-injection-level for the 10 (black triangles), 6 (red squares), and (blue circles) ridges at 350 K.

Image of FIG. 15.
FIG. 15.

Nonradiative current density for the 10, 6, and ridges as a function of injection-level, at 300 K. Inset: corresponding carrier injection level as a function of drive current density for the 10, 6, and at 300 K.

Tables

Generic image for table
Table I.

Measured values of the internal optical loss and transition energy for a 10, 6, and ridge at 350 K.

Generic image for table
Table II.

Values for the measured , , , at an injection-level of 122 meV and the calculated using a of .

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/content/aip/journal/jap/108/4/10.1063/1.3471812
2010-08-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3471812
10.1063/1.3471812
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