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Individual switching of film-based nanoscale epitaxial ferroelectric capacitors
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10.1063/1.3474960
/content/aip/journal/jap/108/4/10.1063/1.3474960
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3474960
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the fabrication procedure for nanoscale epitaxial ferroelectric capacitors.

Image of FIG. 2.
FIG. 2.

SEM images of nanoscale epitaxial ferroelectric capacitors with different radius: (a) 190 nm, (b) 35 nm, and (c) 20 nm, respectively. (c) shows a deposited nanoscale capacitor array with the AAO mask (bottom) and its magnified view (top). (Scale bars are 200 nm.)

Image of FIG. 3.
FIG. 3.

Piezoresponse hysteresis loop of a nanoscale epitaxial ferroelectric capacitor with a radius of 35 nm.

Image of FIG. 4.
FIG. 4.

Histogram of the positive and the negative remnant piezoelectric coefficient distributions for more than 100 nanoscale capacitors with a radius of 35 nm. The inset presents the histogram of the positive and the negative coercive voltage distributions.

Image of FIG. 5.
FIG. 5.

(a) Phase and (b) amplitude PFM images of as-deposited capacitors with a radius of 35 nm. (Scale bar is 200 nm.)

Image of FIG. 6.
FIG. 6.

PFM phase images of (a) a background poled and (b) a back-switched nanoscale capacitor. Scale bar is 50 nm. The dashed line in (a) indicates the location of the capacitor.

Image of FIG. 7.
FIG. 7.

PFM phase images of (a) a background poled and (b) a back-switched micron-scale capacitor. (Scale bar is 360 nm.) The dashed line in (b) indicates the location of the capacitor.

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/content/aip/journal/jap/108/4/10.1063/1.3474960
2010-08-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Individual switching of film-based nanoscale epitaxial ferroelectric capacitors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3474960
10.1063/1.3474960
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