Scanning electron microscopy (SEM) image of an etched zone by FIB. The dimension of the zone is . PFM and KFM images are made in this zone.
KFM signal on sample (c) measure on areas subjected to different number of paths.
(a) KFM signal measured on amorphous and crystallized film after etching. (b) Cross-section of the contact potential measured sample (c). The position of the scan is shown in (b).
PFM hysteresis (amplitude vs dc bias) of etched zone of sample (c) (crystallized PZT) after one (a) and 20 paths (b).
(a) SEM of a typical PZT island of 50 nm in diameter fabricated on sample (b) (amorphous PZT). The angle is related to the etching selectivity between Pt and PZT. (b) SEM of a typical square PZT fabricated on sample (b).
PFM signal (amplitude) measured on PZT islands of 50 nm in diameter after (a) conventional etching process, (b) postannealing at under , and (c) amorphous FIB etching process.
I (V) measurement on sample (c) obtained by CAFM.
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