banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analysis of the degradation induced by focused ion beam for the realization of piezoelectric nanostructures
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Scanning electron microscopy (SEM) image of an etched zone by FIB. The dimension of the zone is . PFM and KFM images are made in this zone.

Image of FIG. 2.
FIG. 2.

KFM signal on sample (c) measure on areas subjected to different number of paths.

Image of FIG. 3.
FIG. 3.

(a) KFM signal measured on amorphous and crystallized film after etching. (b) Cross-section of the contact potential measured sample (c). The position of the scan is shown in (b).

Image of FIG. 4.
FIG. 4.

PFM hysteresis (amplitude vs dc bias) of etched zone of sample (c) (crystallized PZT) after one (a) and 20 paths (b).

Image of FIG. 5.
FIG. 5.

(a) SEM of a typical PZT island of 50 nm in diameter fabricated on sample (b) (amorphous PZT). The angle is related to the etching selectivity between Pt and PZT. (b) SEM of a typical square PZT fabricated on sample (b).

Image of FIG. 6.
FIG. 6.

PFM signal (amplitude) measured on PZT islands of 50 nm in diameter after (a) conventional etching process, (b) postannealing at under , and (c) amorphous FIB etching process.

Image of FIG. 7.
FIG. 7.

I (V) measurement on sample (c) obtained by CAFM.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of the degradation induced by focused ion Ga3+ beam for the realization of piezoelectric nanostructures