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Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities
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10.1063/1.3474989
/content/aip/journal/jap/108/4/10.1063/1.3474989
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3474989

Figures

Image of FIG. 1.
FIG. 1.

Waveform of the MF voltage used as a first type of substrate bias.

Image of FIG. 2.
FIG. 2.

Time behavior of the substrate bias in the case of the high-voltage pulses with rise time below .

Image of FIG. 3.
FIG. 3.

Influence of the deposition pressure on the Young’s modulus of a-C:H films deposited from the precursors and at 60 W rf power.

Image of FIG. 4.
FIG. 4.

Correlation of the Young’s modulus of a-C:H films with the ion energy incorporated per deposited carbon atom for rf plasma deposition from and .

Image of FIG. 5.
FIG. 5.

SEM view of the cross fracture of an a-C:H coated silicon substrate with microcavities.

Image of FIG. 6.
FIG. 6.

Change in a-C:H film morphology at the bottom edge of a trench coated in a rf discharge at a pressure of 7.5 Pa.

Image of FIG. 7.
FIG. 7.

a-C:H film deposited at 2.5 Pa from a rf discharge with the precursor on microstructured substrate: SEM images from the center of the sidewall (on top) and the lower edge of a microcavity (bottom).

Image of FIG. 8.
FIG. 8.

Influence of the a-C:H film thickness on the field strength necessary to cause a leakage current of (precursor ; 2.5 Pa).

Image of FIG. 9.
FIG. 9.

Influence of the pressure on the self-bias voltage and the SiCN:H deposition rate.

Image of FIG. 10.
FIG. 10.

Hardness and Young’s modulus of SiCN:H films as a function of pressure during deposition from rf plasma.

Image of FIG. 11.
FIG. 11.

Influence of the pressure on the elemental composition of SiCN:H films.

Image of FIG. 12.
FIG. 12.

The breakdown field strength and the leakage currents at 1 MV/cm in dependence on the pressure during deposition.

Image of FIG. 13.
FIG. 13.

Permittivity data of SiCN:H films deposited from rf discharges at varying pressure, determined from C-V and I-V measurements.

Image of FIG. 14.
FIG. 14.

SiCN:H grown from rf discharge at 10 Pa on the upper (top) and lower edge (bottom) of a trench.

Image of FIG. 15.
FIG. 15.

Influence of the pressure on the trench coating characteristics of rf deposited SiCN:H films (see text).

Image of FIG. 16.
FIG. 16.

Influence of the MF voltage on the MF power and the SiCN:H deposition rate at a pressure of 1.5 Pa.

Image of FIG. 17.
FIG. 17.

Influence of the MF voltage on the SiCN:H deposition on a microstructured substrate at a pressure of 1.5 Pa.

Image of FIG. 18.
FIG. 18.

Young’s modulus and film stress as a function of pressure during deposition (100 V MF bias voltage).

Image of FIG. 19.
FIG. 19.

SiCN:H composition measured by ERDA in dependence on the pressure (100V MF bias voltage; all film with ).

Image of FIG. 20.
FIG. 20.

Trench coating characteristics of SiCN:H films as a function of pressure (100 V MF bias).

Image of FIG. 21.
FIG. 21.

Influence of the pressure on the film permittivity measured by different methods (100 V MF bias).

Image of FIG. 22.
FIG. 22.

Breakdown field strength and leakage currents (at 1 MV/cm) for about thick films in dependence on the pressure. In addition, is given for three individual films of different thickness deposited at 1.5 Pa.

Tables

Generic image for table
Table I.

Pulse parameters and some characteristics of SiCN:H films deposited at 1 Pa from ECR plasma with microsecond-pulsed substrate bias.

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/content/aip/journal/jap/108/4/10.1063/1.3474989
2010-08-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low temperature plasma enhanced chemical vapor deposition of thin films combining mechanical stiffness, electrical insulation, and homogeneity in microcavities
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/4/10.1063/1.3474989
10.1063/1.3474989
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