Waveform of the MF voltage used as a first type of substrate bias.
Time behavior of the substrate bias in the case of the high-voltage pulses with rise time below .
Influence of the deposition pressure on the Young’s modulus of a-C:H films deposited from the precursors and at 60 W rf power.
Correlation of the Young’s modulus of a-C:H films with the ion energy incorporated per deposited carbon atom for rf plasma deposition from and .
SEM view of the cross fracture of an a-C:H coated silicon substrate with microcavities.
Change in a-C:H film morphology at the bottom edge of a trench coated in a rf discharge at a pressure of 7.5 Pa.
a-C:H film deposited at 2.5 Pa from a rf discharge with the precursor on microstructured substrate: SEM images from the center of the sidewall (on top) and the lower edge of a microcavity (bottom).
Influence of the a-C:H film thickness on the field strength necessary to cause a leakage current of (precursor ; 2.5 Pa).
Influence of the pressure on the self-bias voltage and the SiCN:H deposition rate.
Hardness and Young’s modulus of SiCN:H films as a function of pressure during deposition from rf plasma.
Influence of the pressure on the elemental composition of SiCN:H films.
The breakdown field strength and the leakage currents at 1 MV/cm in dependence on the pressure during deposition.
Permittivity data of SiCN:H films deposited from rf discharges at varying pressure, determined from C-V and I-V measurements.
SiCN:H grown from rf discharge at 10 Pa on the upper (top) and lower edge (bottom) of a trench.
Influence of the pressure on the trench coating characteristics of rf deposited SiCN:H films (see text).
Influence of the MF voltage on the MF power and the SiCN:H deposition rate at a pressure of 1.5 Pa.
Influence of the MF voltage on the SiCN:H deposition on a microstructured substrate at a pressure of 1.5 Pa.
Young’s modulus and film stress as a function of pressure during deposition (100 V MF bias voltage).
SiCN:H composition measured by ERDA in dependence on the pressure (100V MF bias voltage; all film with ).
Trench coating characteristics of SiCN:H films as a function of pressure (100 V MF bias).
Influence of the pressure on the film permittivity measured by different methods (100 V MF bias).
Breakdown field strength and leakage currents (at 1 MV/cm) for about thick films in dependence on the pressure. In addition, is given for three individual films of different thickness deposited at 1.5 Pa.
Pulse parameters and some characteristics of SiCN:H films deposited at 1 Pa from ECR plasma with microsecond-pulsed substrate bias.
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