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On the interplay between quantum confinement and dielectric mismatch in high- based quantum wells
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10.1063/1.3460631
/content/aip/journal/jap/108/5/10.1063/1.3460631
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/5/10.1063/1.3460631

Figures

Image of FIG. 1.
FIG. 1.

QW potential profile. Solid line means nonabrupt QW, dashed line means abrupt QW, and dotted line means carrier WF. and mean dielectric constant linear interpolation, as shown in Table II. means QW width, and and mean barrier and well gap energy, respectively.

Image of FIG. 2.
FIG. 2.

Schematic representation of the potential profiles and ground states WFs for both electron and heavy hole particles in (a) , (b) , (c) , and (d) QWs.

Image of FIG. 3.
FIG. 3.

Left: dependence of ground state energy on the QW width of (a) electrons, (b) light holes, and (c) heavy holes. The interfaces width: 0 nm (abrupt), 0.5 nm, and 1.0 nm are represented by solid, dashed, and dashed double-dotted lines, respectively. Right: carrier WFs (in arbitrary units) for abrupt (d) 5 nm and (e) 20 nm wide QWs, with electron, light hole, and heavy hole represented by solid, dashed, and dashed-double-dotted lines, respectively.

Image of FIG. 4.
FIG. 4.

Stark shift in the ground state recombination energy for 5 nm (a) and (c), and 20 nm (b) and (d) QW width. The transitions are depicted on (a) and (b), and the transitions are depicted on (c) and (d). In abrupt QWs and nonabrupt QWs , these transitions are represented by solid and dashed lines, respectively. For the sake of comparison, and transitions without image charge effects are also depicted: (◻) and (○).

Image of FIG. 5.
FIG. 5.

Stark shift in the ground state recombination energy for 5 nm (a) and (c), and 20 nm (b) and (d) QW width. The transitions are depicted on the left side and the transitions are depicted on the right side. In abrupt QWs and nonabrupt QWs , these transitions are represented by solid and dashed lines, respectively. For the sake of comparison, and transitions without image charge effects are also depicted: (◻) and (○).

Image of FIG. 6.
FIG. 6.

Electron–hole WF overlap vs QW width ( top row, bottom row) for nonbiased (left column) and biased (right column) electrical fields. The QWs considered are with the following interfaces: abrupt (solid), 0.5 nm (dashed), and 1.0 nm (dashed-dotted). For comparison, the results without image charge effects for unbiased QWs are also included: (◻), , (△), and (×).

Image of FIG. 7.
FIG. 7.

Electron–hole WF overlap vs QW width ( top row, bottom row) for nonbiased (left column) and biased (right column) electrical fields. The QWs considered are with the following interfaces: abrupt (solid), 0.5 nm (dashed), and 1.0 nm (dashed-dotted). For comparison, the results without image charge effects for unbiased QWs are also included: (◼), (△), and (×).

Image of FIG. 8.
FIG. 8.

(a) Differences in the recombination energy of an electron–light hole pair for different QW widths: 5 nm , 10 nm (●), and 15 nm (△). (b) Absolute value of the exciton binding energy of an electron–light hole pair confined in a 5 nm QW. Three different approaches were used for calculation: AP1 (◼), AP2 (○), and AP3 (×).

Image of FIG. 9.
FIG. 9.

(a) Differences in the recombination energy of an electron–heavy hole pair for different QW widths: 5 nm , 10 nm (●), and 15 nm (△). (b) Absolute value of the exciton binding energy of an electron–heavy hole pair confined in a 5 nm QW. Three different approaches were used for calculation: AP1 (◻), AP2 (○), and AP3 (×).

Image of FIG. 10.
FIG. 10.

Schematic diagram of interactions between carriers and their image charges. In (a), when , the images charges have an opposite sign with respect to the confined carriers and the potential in the QW region is attractive. In (b), for , the image charges have the same sign as the confined carriers and the potential in the well region is repulsive. Thus, the individual carrier energies increase (decrease) for .

Tables

Generic image for table
Table I.

Semiconductor and oxide parameters used in the calculation of the electronic and optical properties of the QWs (Refs. 1, 14–16, 29, and 30). The zinc blend phase of GaN was considered instead of its wurtzite structure in order to avoid polarization effects (Ref. 31).

Generic image for table
Table II.

Linear interpolation of the dielectric constant in the interfacial regions.

Generic image for table
Table III.

Comparison of the total exciton energy calculated within different approaches. AP1 does not consider any image charge related effects; AP2 only accounts for the self-energy correction of the individual carrier energies; AP3 includes all interactions related to image charges. The QW width used in these calculations is .

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/content/aip/journal/jap/108/5/10.1063/1.3460631
2010-09-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the interplay between quantum confinement and dielectric mismatch in high-k based quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/5/10.1063/1.3460631
10.1063/1.3460631
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