XRD pattern of rf-sputtered ZnO layer before and after post-deposition annealing.
Sheet resistance of polycrystalline heterostructure vs thickness of cap layer for , 0.2, 0.3, 0.4, and 0.5. The lines are guides to the eyes.
(a) Hall mobility and sheet carrier concentration of heterostructure in saturation as functions of Mg content x. (b) Comparison of experimental and calculated saturation sheet resistances as functions of Mg content x. The lines are guides to the eye.
Hall mobility and carrier concentration of heterostructure with capping layer thickness of as functions of temperature.
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