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Angular dependence of tunnel magnetoresistance in magnetic tunnel junctions and specific aspects in spin-filtering devices
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10.1063/1.3466778
/content/aip/journal/jap/108/6/10.1063/1.3466778
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3466778
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

ratio for a Dirac barrier as a function of the barrier height for three different spin polarisations.

Image of FIG. 2.
FIG. 2.

ratio for a rectangular normal barrier with an as a function of the barrier thickness and height.

Image of FIG. 3.
FIG. 3.

Evolution of the MR (a) and of the ratio as a function of the voltage applied to the junction. Barrier parameters are a thickness of 1 nm, a height of 1 eV and an effective mass of . In inset: Angular MR at a bias of 1.275 V.

Image of FIG. 4.
FIG. 4.

(a) ratio for a rectangular ferromagnetic barrier as a function of the barrier thickness and mean height . The effective mass is and the difference between spin up and down bands is 0.25 eV. (b) Influence of the splitting in the barrier on the MR and on the ratio for two sets of parameters: and (red line) and and (green line)

Image of FIG. 5.
FIG. 5.

Evolution of the MR (dotted line) and of the ratio (continuous line) as a function of the voltage applied to the junction. Barrier parameters are a thickness of 1 nm, a height of 1 eV, effective mass of and splitting of 0.25 eV.

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/content/aip/journal/jap/108/6/10.1063/1.3466778
2010-09-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Angular dependence of tunnel magnetoresistance in magnetic tunnel junctions and specific aspects in spin-filtering devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3466778
10.1063/1.3466778
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