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Crystallization behavior of amorphous thin films
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10.1063/1.3471799
/content/aip/journal/jap/108/6/10.1063/1.3471799
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471799

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of the 200-nm-thick (a) , (b) , and (c) films as a function of the annealing temperature. The samples annealed below did not show any XRD peaks and the XRD spectra below were emitted. The peaks marked by the black circles (●) and the white squares (◻) corresponded to the hexagonal and fcc phases, respectively.

Image of FIG. 2.
FIG. 2.

Temperature-dependent sheet resistance for the 200-nm-thick (, 0.06, and 0.10) thin films: , , . All of the points represent the average values of three measurements. The films were annealed in a atmosphere for 10 min at (heating rate ). The film resistivity is defined as .

Image of FIG. 3.
FIG. 3.

Optical microscope images of the (a) , (b) , and (c) films that were illuminated by the nanopulse laser beams. The -axis represents the -variation of 14 steps (, step ) and the -axis is the -variation of 15 steps (, step ). For , no spots were observed. The regions I, II, and III seen in (a) are no spot (amorphous phase), crystallized and burning (ablation) spots, respectively. Region III did not exist in Al-added GST films.

Image of FIG. 4.
FIG. 4.

Three dimensional mesh plots for the nanopulse reflection response in the (a) , (b) , and (c) films. The reflection difference is , where and are the intensities before and after illumination, respectively. Symbols I and II in (a) represent the amorphous and crystalline regions, respectively.

Image of FIG. 5.
FIG. 5.

Semilog-scaled plots of vs the pulse duration for (a) and (b) . The sensitivity represents the pulse duration corresponding to 50% of the maximum and is an average time that is related to the nucleation process of the amorphous-to-crystalline transition. The -axis intercept of these plots is the threshold pulse duration. The slope around is an important factor in the evaluation of the crystallization kinetics and is related to the growth process.

Tables

Generic image for table
Table I.

The quantitative parameters that were obtained from Fig. 5. The sensitivity, , was defined as the pulse duration corresponding to 50% and the contrast, was the slope around .

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/content/aip/journal/jap/108/6/10.1063/1.3471799
2010-09-24
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Crystallization behavior of amorphous Alx(Ge2Sb2Te5)1−x thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471799
10.1063/1.3471799
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