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Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
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10.1063/1.3471804
/content/aip/journal/jap/108/6/10.1063/1.3471804
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471804

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the SQW LED in this study.

Image of FIG. 2.
FIG. 2.

Schematic diagram of the staggered-QW.

Image of FIG. 3.
FIG. 3.

Output power and emission wavelength of varied staggered-QW LEDs.

Image of FIG. 4.
FIG. 4.

Simulated L-I-V curves of structure A, B, C, and original structure.

Image of FIG. 5.
FIG. 5.

Emission spectra of structure A and original structure at 20 mA.

Image of FIG. 6.
FIG. 6.

Band diagrams with ground-state electron and hole wave functions of (a) structure A and (b) original structure at 20 mA.

Image of FIG. 7.
FIG. 7.

(a) Electron concentration together with conduction band diagram and (b) hole concentration together with valence band diagram for structure A and original structure at 20 mA.

Image of FIG. 8.
FIG. 8.

Built-in electrostatic field within the active region of structure A and original structure at 20 mA.

Image of FIG. 9.
FIG. 9.

Schematic diagram of polarization charges at each interface within the active region for structure A and original structure.

Image of FIG. 10.
FIG. 10.

Conduction band diagrams of structure A and original structure at 20 mA.

Image of FIG. 11.
FIG. 11.

SRH recombination rate of structure A and original structure at 20 mA.

Tables

Generic image for table
Table I.

Band gap energy of GaN, AlN, and InN.

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/content/aip/journal/jap/108/6/10.1063/1.3471804
2010-09-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471804
10.1063/1.3471804
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