1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
Rent:
Rent this article for
USD
10.1063/1.3471804
/content/aip/journal/jap/108/6/10.1063/1.3471804
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471804
/content/aip/journal/jap/108/6/10.1063/1.3471804
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/108/6/10.1063/1.3471804
2010-09-24
2014-08-29
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/6/10.1063/1.3471804
10.1063/1.3471804
SEARCH_EXPAND_ITEM