rms roughness measured by AFM and layer thickness measured by SE as a function of deposition temperature . Two typical AFM micrographs (scan area: ) are also shown for the depositions at RT and at .
Infrared absorption spectra normalized for as-deposited samples, collected at Brewster angle (65°). Inset: relative evolution of peaks intensity according to the deposition temperature .
Evolution of the wave number of references and SRSO:Er samples for each deposition temperature.
(a) Ellipsometry measurements of the refractive index at 633 nm and Si excess as estimated by FTIR techniques and the formula (1) in function of (the curves are just a guide for the eyes). (b) SIMS measurements of the erbium concentration according to the deposition temperature.
PL spectra (normalized to the thickness) at a flux of of both Si-nc (range 600–900 nm) and of ions (range 1400–1700 nm) for all deposition temperatures. Inset: Si-nc PL intensities compared to the Er-PL intensities according to the deposition temperature (both normalized to unity).
Behavior of the lifetime values of at according to the deposited temperature detectable at the lower excitation photon flux. Inset: a typical PL decay trace of SRSO:Er collected for sample deposited at . Note the PL decay dynamics is biexponential as described in Ref. 28.
Comparison of PL intensity of as-deposited samples recorded at and obtained after indirect excitation (476 nm) and direct excitation (980 nm). Note that the results corresponding to the 980 nm excitation are multiplied by .
Comparison of the evolution of the Er-PL efficiency of the as-deposited samples to that obtained from their counterparts deposited at RT and annealed for 2 h at . The inset compares two normalized Er-PL efficiency spectra of two SRSO: Er thin films: (i) deposited at for 2 h (full squares) and (ii) deposited at RT and annealed at for 2 h (full circles).
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