Bright field TEM images of annealed samples elaborated with (a) and (b) . Dark field TEM images of the corresponding r values (c) and (d), respectively. In the first case, columnar growth and relatively large grains are observed whereas in the latter case, a random growth prevails with a concomitant nanostructuration of the film.
PL spectra obtained for Nd doped gallium oxide films at two different excitation wavelengths: 266 (blue line) and 787 nm (red line). All films have been annealed, excluded the one related to the (a) spectra. (Scales have been adapted for better view).
PL intensities for Nd ions and VIS emission vs surface ratio (r).
PLE spectra obtained both for emission at 500 nm (red line) and emission related to Nd ions at 900 nm (dark line) for samples containing different amount of Nd ions. Additionally, absorbance spectra have been given (dotted line).
Normalized at 10K integrated PL intensities of the 500 nm (a) and 900 nm (b) bands, measured at different temperatures and obtained for samples with different Nd contents at 266 nm excitation wavelength.
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