Setup of vapor cooling condensation system.
XRD patterns of HT-ZnO films and LT-ZnO films deposited on Si.
AFM images of (a) HT-ZnO films and (b) LT-ZnO films deposited on Si.
The electron concentration and mobility of (a) HT-ZnO and (b) LT-ZnO as a function of measurement temperature.
The conductivity as a function of reciprocal temperature for HT-ZnO and LT-ZnO films.
The dependence of on photon energy for LT-ZnO films and HT-ZnO films.
The absorption coefficient in the near band-edge regime as a function of the incident photon energy for LT-ZnO films and HT-ZnO films.
Room-temperature PL spectra of HT-ZnO films and LT-ZnO films excited with a He–Cd laser with a wavelength of 325 nm.
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