(a) A magnetization hysteresis loop of substrate/Ta(5)/Ru(20)//Co(0.2)/Ru(0.8)/Co(0.2)// (in nanometer). (b) Magnetization hysteresis loops of sample A (◻), sample B (○), and sample C(△).
TMR curves of (a) sample A, (b) sample B, (c) sample C, and (d) sample D. The arrows represent the magnetic moment of the PL (bottom arrows), IL (middle arrows), and the FL (top arrows), respectively.
High-field TMR curves of p-MTJs with SyF pinned layers, in which the IL thickness is (a) 1 nm and (b) 2 nm.
TMR curves of (a) sample B and (b) sample D measured at 300 K (◻), and 10 K (●).
Cross-sectional TEM images of sample B (a) and sample D (b) after annealing at .
Layer stack of the pinned layers in p-MTJs.
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