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Perpendicular magnetic tunnel junctions with synthetic ferrimagnetic pinned layer
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10.1063/1.3486059
/content/aip/journal/jap/108/7/10.1063/1.3486059
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3486059

Figures

Image of FIG. 1.
FIG. 1.

(a) A magnetization hysteresis loop of substrate/Ta(5)/Ru(20)//Co(0.2)/Ru(0.8)/Co(0.2)// (in nanometer). (b) Magnetization hysteresis loops of sample A (◻), sample B (○), and sample C(△).

Image of FIG. 2.
FIG. 2.

TMR curves of (a) sample A, (b) sample B, (c) sample C, and (d) sample D. The arrows represent the magnetic moment of the PL (bottom arrows), IL (middle arrows), and the FL (top arrows), respectively.

Image of FIG. 3.
FIG. 3.

High-field TMR curves of p-MTJs with SyF pinned layers, in which the IL thickness is (a) 1 nm and (b) 2 nm.

Image of FIG. 4.
FIG. 4.

TMR curves of (a) sample B and (b) sample D measured at 300 K (◻), and 10 K (●).

Image of FIG. 5.
FIG. 5.

Cross-sectional TEM images of sample B (a) and sample D (b) after annealing at .

Tables

Generic image for table
Table I.

Layer stack of the pinned layers in p-MTJs.

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/content/aip/journal/jap/108/7/10.1063/1.3486059
2010-10-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Perpendicular magnetic tunnel junctions with synthetic ferrimagnetic pinned layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3486059
10.1063/1.3486059
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