High porosity material structure (interconnected pores).
XRF spectra of pristine CVD films, normalized on Si peak intensity. Electron excitation energy .
FTIR absorption spectra, for pristine films and films exposed to O atoms for 50 s (Si substrate absorption spectrum is subtracted).
Relative change in atom densities during the low-k sample exposure to O atoms.
Relative change in chemical bond densities during the low-k sample exposure to O atoms.
The structure of the regular vertical porous channels used in the model. One channel occupies square area , the pore surface area—, the interconnectedness parameter —diameter of the holes between the adjacent pores.
Distributions of number of collisions of a single O atom with a surface of a single pore at various (depths) (—pore radius, —pore connection hole diameter, and —O atom loss probability in a single collision), calculated by the MC random-walk model.
The calculated -group removal dynamics for the CVD1, CVD2, and CVD3 films. The data are presented as they are measured in the experiment, namely, as a fraction of the residuary amount from the total amount in the pristine film. So the direct comparison with the experimental data is possible (see Fig. 7).
The calculated evolution of the -group surface density inside the porous channels in a bulk of CVD2 film. Zero on the depth corresponds to the film surface. 200 nm of the depth is boundary between the CVD2 film and Si substrate.
Low-k sample’s characteristics.
Parameters for the CVD1, CVD2, and CVD3 nanoporous low-k samples used in modeling.
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