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The mechanism of low-k SiOCH film modification by oxygen atoms
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Image of FIG. 1.
FIG. 1.

High porosity material structure (interconnected pores).

Image of FIG. 2.
FIG. 2.

Experimental setup.

Image of FIG. 3.
FIG. 3.

XRF spectra of pristine CVD films, normalized on Si peak intensity. Electron excitation energy .

Image of FIG. 4.
FIG. 4.

FTIR absorption spectra, for pristine films and films exposed to O atoms for 50 s (Si substrate absorption spectrum is subtracted).

Image of FIG. 5.
FIG. 5.

AFM scan.

Image of FIG. 6.
FIG. 6.

Relative change in atom densities during the low-k sample exposure to O atoms.

Image of FIG. 7.
FIG. 7.

Relative change in chemical bond densities during the low-k sample exposure to O atoms.

Image of FIG. 8.
FIG. 8.

The structure of the regular vertical porous channels used in the model. One channel occupies square area , the pore surface area—, the interconnectedness parameter —diameter of the holes between the adjacent pores.

Image of FIG. 9.
FIG. 9.

Distributions of number of collisions of a single O atom with a surface of a single pore at various (depths) (—pore radius, —pore connection hole diameter, and —O atom loss probability in a single collision), calculated by the MC random-walk model.

Image of FIG. 10.
FIG. 10.

The calculated -group removal dynamics for the CVD1, CVD2, and CVD3 films. The data are presented as they are measured in the experiment, namely, as a fraction of the residuary amount from the total amount in the pristine film. So the direct comparison with the experimental data is possible (see Fig. 7).

Image of FIG. 11.
FIG. 11.

The calculated evolution of the -group surface density inside the porous channels in a bulk of CVD2 film. Zero on the depth corresponds to the film surface. 200 nm of the depth is boundary between the CVD2 film and Si substrate.


Generic image for table
Table I.

Low-k sample’s characteristics.

Generic image for table
Table II.

Parameters for the CVD1, CVD2, and CVD3 nanoporous low-k samples used in modeling.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The mechanism of low-k SiOCH film modification by oxygen atoms