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The fabrication of GaN-based nanopillar light-emitting diodes
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10.1063/1.3488905
/content/aip/journal/jap/108/7/10.1063/1.3488905
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3488905
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The SEM images of the InGaN/GaN MQW nanopillars.

Image of FIG. 2.
FIG. 2.

The mean dimension and density of Ni nanodots as a function of (a) Ni thickness and (b) RTA duration times.

Image of FIG. 3.
FIG. 3.

(a) Normalized PL intensity spectra for as-grown and nanopillar LED structures. The inset is the PL intensity spectra of as-grown sample and nanopillars before and after HCl treatment, in which PL intensities are normalized by the peak intensity of as-grown sample. (b) The IQE of nanopillars before and after HCl treatment at various temperatures.

Image of FIG. 4.
FIG. 4.

Schematic process procedure of fabricating an InGaN/GaN MQW nanopillar LED device.

Image of FIG. 5.
FIG. 5.

curves of the nanopillar LED array and the planar LED.

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/content/aip/journal/jap/108/7/10.1063/1.3488905
2010-10-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The fabrication of GaN-based nanopillar light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3488905
10.1063/1.3488905
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