The SEM images of the InGaN/GaN MQW nanopillars.
The mean dimension and density of Ni nanodots as a function of (a) Ni thickness and (b) RTA duration times.
(a) Normalized PL intensity spectra for as-grown and nanopillar LED structures. The inset is the PL intensity spectra of as-grown sample and nanopillars before and after HCl treatment, in which PL intensities are normalized by the peak intensity of as-grown sample. (b) The IQE of nanopillars before and after HCl treatment at various temperatures.
Schematic process procedure of fabricating an InGaN/GaN MQW nanopillar LED device.
curves of the nanopillar LED array and the planar LED.
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