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Local etch control for fabricating nanomechanical devices
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10.1063/1.3490229
/content/aip/journal/jap/108/7/10.1063/1.3490229
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3490229
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Defined NEMS beam resonator prior to underetching, i.e., release. The actual mechanical structure is attached to the clamping points while the outer left and right electrodes capacitively couple to the resonator for read/write operations. The central electrode is commonly used as a capacitive drive. The inset gives the layer sequence and thickness employed.

Image of FIG. 2.
FIG. 2.

Sketch of the vapor etching apparatus: (a) light bulb for heating; (b) a sample chip flipped upside down on a supporting wire; (c) Teflon dish; (d) supporting wire; (e) plastic film with holes; (f) Teflon beaker; (g) HF vapor; (h) 6:1 HF (50%) to DI water solution.

Image of FIG. 3.
FIG. 3.

Readily etched and suspended NEMS devices with two different geometries, (a) and (b): the “window” defined by electron beam illumination is clearly identified. Within this region the underetching process is boosted. The residue of particles such as , , form from the reaction by-products during the etching process (see small blobs remaining within the window). This can be controlled via the temperature and the ambient pressure: higher temperature and lower process pressure lead to fewer particles(Refs. 18 and 19). Also visible is the increased etch depth within the window. The inset in (a) gives a close-up of the supporting sidewall of one of the clamping points.

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/content/aip/journal/jap/108/7/10.1063/1.3490229
2010-10-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Local etch control for fabricating nanomechanical devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/7/10.1063/1.3490229
10.1063/1.3490229
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