XRD patterns of ZnO films grown at different substrate temperatures on -sapphire substrate.
ZnO (002) peak position of the films annealed in oxygen atmosphere at different temperatures.
Fourier filtered HRTEM image of as-grown ZnO (tilted to zone) showing highly epitaxial film on sapphire with an atomically sharp interface. Inset shows the selected area diffraction pattern of film-substrate interface.
(a) XPS high-resolution scan of oxygen peak for as-grown ZnO. Inset shows its SIMS depth profile of Co, Si, Mn, Fe, and Ni impurities. (b) Oxygen peak of oxygen-annealed samples. Inset shows the EELS spectra of as-grown ZnO film described in (a). XPS data has been fitted by Gaussian functions.
(a) Carrier concentrations and resistivity of ZnO films annealed at different temperatures in 760 Torr oxygen atmosphere. (b) represents the “on” and “off” states of the samples.
(a) RT PL spectra of ZnO films grown at different oxygen partial pressures . (b) PL spectra of as-grown, oxygen-annealed, and further vacuum annealed samples.
M-H plot of as-grown and oxygen-annealed (at 760 Torr) samples at different temperatures.
(a) RT hysteresis loops of as-grown, oxygen annealed, and oxygen annealed followed by vacuum annealed ZnO films. (b) “on” and “off” magnetic states of the samples.
Experimental X-band EPR spectra ( and -axis) of ZnO films grown and treated under the conditions listed in the Table III. (a) As-grown, (b) annealed in the presence of oxygen, (c) annealed in the presence of oxygen followed by vacuum annealing, and (d) experimental (black) and least-square fit (red) spectra of as-grown ZnO shown in (a). The insets in (b) and (c) show, respectively, the forbidden and transitions. The least-squares fit has been carried out using EWVOIGT program (Ref. 20) with the following best-fit parameters: Lorentzian line shape with and .
Carrier concentrations, resistivity, mobility, and RT saturation moments of ZnO films grown at different substrate temperatures under pressure and different oxygen partial pressures at .
Temperature dependent saturation moments and carrier concentrations of ZnO thin films.
The best fit parameters for the EPR spectra of as-grown and annealed ZnO films. The isotropic -factor, , is calculated as .
Article metrics loading...
Full text loading...