XRD patterns of the films grown at different substrate temperatures: (a) 423 K, (b) 498 K, (c) 573 K, (d) 648 K and (e) 723 K. Inset: AFM image showing the morphology of epilayer thick, grown at 498 K.
(a) Raman spectrum of as-grown film vs annealed sample. Growth temperature was 498 K. Raman spectrum obtained by a 532 nm laser, annealing pressure: . Typical XPS narrow scan of (b) and (c) of the film deposited at 498 K.
FWHM and spacing values estimated by Gaussian fits of (800) XRD peaks plotted against substrate temperature.
Arrhenius plot of conductivity for film grown at 498 K. The inset depicts the temperature dependence of conductivity for film grown at 498 K, measured between 85 and 400 K. Solid lines show the theoretical simulation and solid circles show experimental data points.
Room temperature electrical properties of films grown at 498 K in different measuring magnetic fields.
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