1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Structural and electrical characteristics of high quality (100) orientated- thin films grown by radio-frequency magnetron sputtering
Rent:
Rent this article for
USD
10.1063/1.3493208
/content/aip/journal/jap/108/8/10.1063/1.3493208
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/8/10.1063/1.3493208

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of the films grown at different substrate temperatures: (a) 423 K, (b) 498 K, (c) 573 K, (d) 648 K and (e) 723 K. Inset: AFM image showing the morphology of epilayer thick, grown at 498 K.

Image of FIG. 2.
FIG. 2.

(a) Raman spectrum of as-grown film vs annealed sample. Growth temperature was 498 K. Raman spectrum obtained by a 532 nm laser, annealing pressure: . Typical XPS narrow scan of (b) and (c) of the film deposited at 498 K.

Image of FIG. 3.
FIG. 3.

FWHM and spacing values estimated by Gaussian fits of (800) XRD peaks plotted against substrate temperature.

Image of FIG. 4.
FIG. 4.

Arrhenius plot of conductivity for film grown at 498 K. The inset depicts the temperature dependence of conductivity for film grown at 498 K, measured between 85 and 400 K. Solid lines show the theoretical simulation and solid circles show experimental data points.

Tables

Generic image for table
Table I.

Room temperature electrical properties of films grown at 498 K in different measuring magnetic fields.

Loading

Article metrics loading...

/content/aip/journal/jap/108/8/10.1063/1.3493208
2010-10-21
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structural and electrical characteristics of high quality (100) orientated-Zn3N2 thin films grown by radio-frequency magnetron sputtering
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/8/10.1063/1.3493208
10.1063/1.3493208
SEARCH_EXPAND_ITEM