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Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
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10.1063/1.3493262
/content/aip/journal/jap/108/8/10.1063/1.3493262
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/8/10.1063/1.3493262
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Surface morphology of GaAs QDs. [(a), (c), (e), and (g)] Schematic cross-sections of the grown structures. [(b), (d), (f), and (h)] AFM images of the GaAs QDs. Height scale is 10 nm for all images.

Image of FIG. 2.
FIG. 2.

Size distribution of GaAs QDs: [(a) and (b)] uncapped QDs and [(c) and (d)] 4 nm AlGaAs capped QDs. [(a) and (c)] Height histograms of the QDs. [(b) and (d)] Histograms of the dot base along the and [110] direction. The histograms are fitted with Gaussian distribution functions.

Image of FIG. 3.
FIG. 3.

RHEED patterns of 4 nm AlGaAs capped QDs, annealed at (a) 580 and (b) .

Image of FIG. 4.
FIG. 4.

Low-temperature PL spectra of original QDs and 4 nm AlGaAs-capped QDs annealed at 580 or . The vertical line around 750 nm is the calculated transition energy for a 4 nm-height QD with a lateral size of 60 nm.

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/content/aip/journal/jap/108/8/10.1063/1.3493262
2010-10-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/8/10.1063/1.3493262
10.1063/1.3493262
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