Surface morphology of GaAs QDs. [(a), (c), (e), and (g)] Schematic cross-sections of the grown structures. [(b), (d), (f), and (h)] AFM images of the GaAs QDs. Height scale is 10 nm for all images.
Size distribution of GaAs QDs: [(a) and (b)] uncapped QDs and [(c) and (d)] 4 nm AlGaAs capped QDs. [(a) and (c)] Height histograms of the QDs. [(b) and (d)] Histograms of the dot base along the and  direction. The histograms are fitted with Gaussian distribution functions.
RHEED patterns of 4 nm AlGaAs capped QDs, annealed at (a) 580 and (b) .
Low-temperature PL spectra of original QDs and 4 nm AlGaAs-capped QDs annealed at 580 or . The vertical line around 750 nm is the calculated transition energy for a 4 nm-height QD with a lateral size of 60 nm.
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