Deposited InAs amount among the 16 pieces uniformly cut from 2 in. wafers predicted by the cosine law. The averaged InAs amount is 1.9 ML (dashed line) and 2.0 ML (solid line), respectively. The arrow indicates the center of the wafer. The inset shows schematically the slant incidence of indium beam.
Densities of the InAs QDs at different growth temperatures obtained from AFM.
(a) Variations in the second-order derivative RD spectra with respect to wavelength of all the pieces of sample displayed by the color contrast. For clarity, the spectra intensity in the long wavelength range is magnified by five times. (b) LH-transition energies of WL for six samples grown at different temperatures. The straight lines in two panels are the guided lines showing the linear variation in LH-transition energy for 490 and samples. (c) The OA intensities of the second-order derivative of LH-transition energy for the six samples. Arrows indicate the determined from the energy aspect criterion.
Critical thicknesses of the six samples determined from RDS and AFM.
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