(a) Simplified diagram of a HCSC with indication of major parameters used for modeling. (absorber electronic band gap), (electrons chemical potential), (holes chemical potential), , and (extraction energy of hot carriers). (b) Schematic representation of energy and particle fluxes interactions used in the model (particle fluxes-full arrows and energy fluxes-dotted arrows).
HCSC efficiency as a function of carrier extraction energy level. Thermalisation time is 100 ps, lattice temperature is 300 K. Absorber layer thickness is 50 nm.
(a) relations, (b) carriers temperature, (c) carriers densities, and (d) quasi-Fermi potentials separation vs extraction voltage for different extraction energies.
AR and II lifetimes vs extraction voltage for different extraction energies.
(a) Thermalisation losses vs extraction voltage for different extraction energies. Thermalisation constant is 100 ps. (b) Calculated efficiency limit versus thermalisation constant.
Bulk InN absorption coefficient from (Ref. 34) (dashed line) and approximation used for calculation (solid line), (inset) InN photoluminescence signal.
(a) Efficiency limit vs extraction energy for different absorber thicknesses. (b) Efficiency limits vs absorber thickness for different extraction energies. (c) relations for different absorber thicknesses. Thermalisation constant is 100 ps.
Model parameters for bulk indium nitride conduction and valence bands. Values have been extracted from Fritsch et al. (Ref. 14).
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