RHEED observation with [(a)–(d)] and corresponding AFM results ([(e)–(h)] of u-ZnO and Te doped ZnO film (ZnO:Te) with different Te fluxes. [rms: (e) 3.54 nm, (f) 0.51 nm, (g) 4.18 nm, (h) 11.06 nm.]
RHEED patterns with of u-ZnO and ZnO:N with different growth temperatures (a) u-ZnO , (b) u-ZnO , and (c) ZnO:Te .
The surface morphology and roughness value of (a) u-ZnO, (b) ZnO:N, (c) ZnO:Te, and (d) film by AFM observation, respectively.
Nitrogen concentration ([N]) of ZnO:N and films with different Te concentration ([Te]) and/or Te fluxes .
The illustration of isoelectronic reaction for Te atoms incorporated into ZnO.
(a) The FWHM of x-ray rocking curve for (0002) reflection of ZnO:N and film with different N flows. (b) X-ray -scans for (0002) reflection of u-ZnO film and those of ZnO:N and film under N flow of 0.2 SCCM.
The c-axis lattice constants of u-ZnO, ZnO:N, and films evaluated by x-ray (0002) scans with elevating nitrogen flow.
Low temperature (10 K) PL spectra of NBE for u-ZnO film, ZnO:N and (, ).
Electron mobility with increasing N concentration of ZnO:N and films.
The calculated (lines) compensation ratio with considering dislocation density and the measured the electron mobilities against electron concentrations of u-ZnO, ZnO:N, and film at RT.
Williamson–Hall plots for ZnO:N and films evaluated by x-ray rocking curve for (0002) and (0004) reflections, respectively.
Electrical properties and nitrogen concentration of u-ZnO, ZnO:Te, ZnO:N, and film with different nitrogen flow and tellurium flux.
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