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Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy
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10.1063/1.3498800
/content/aip/journal/jap/108/9/10.1063/1.3498800
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3498800

Figures

Image of FIG. 1.
FIG. 1.

RHEED observation with [(a)–(d)] and corresponding AFM results ([(e)–(h)] of u-ZnO and Te doped ZnO film (ZnO:Te) with different Te fluxes. [rms: (e) 3.54 nm, (f) 0.51 nm, (g) 4.18 nm, (h) 11.06 nm.]

Image of FIG. 2.
FIG. 2.

RHEED patterns with of u-ZnO and ZnO:N with different growth temperatures (a) u-ZnO , (b) u-ZnO , and (c) ZnO:Te .

Image of FIG. 3.
FIG. 3.

The surface morphology and roughness value of (a) u-ZnO, (b) ZnO:N, (c) ZnO:Te, and (d) film by AFM observation, respectively.

Image of FIG. 4.
FIG. 4.

Nitrogen concentration ([N]) of ZnO:N and films with different Te concentration ([Te]) and/or Te fluxes .

Image of FIG. 5.
FIG. 5.

The illustration of isoelectronic reaction for Te atoms incorporated into ZnO.

Image of FIG. 6.
FIG. 6.

(a) The FWHM of x-ray rocking curve for (0002) reflection of ZnO:N and film with different N flows. (b) X-ray -scans for (0002) reflection of u-ZnO film and those of ZnO:N and film under N flow of 0.2 SCCM.

Image of FIG. 7.
FIG. 7.

The c-axis lattice constants of u-ZnO, ZnO:N, and films evaluated by x-ray (0002) scans with elevating nitrogen flow.

Image of FIG. 8.
FIG. 8.

Low temperature (10 K) PL spectra of NBE for u-ZnO film, ZnO:N and (, ).

Image of FIG. 9.
FIG. 9.

Electron mobility with increasing N concentration of ZnO:N and films.

Image of FIG. 10.
FIG. 10.

The calculated (lines) compensation ratio with considering dislocation density and the measured the electron mobilities against electron concentrations of u-ZnO, ZnO:N, and film at RT.

Image of FIG. 11.
FIG. 11.

Williamson–Hall plots for ZnO:N and films evaluated by x-ray rocking curve for (0002) and (0004) reflections, respectively.

Tables

Generic image for table
Table I.

Electrical properties and nitrogen concentration of u-ZnO, ZnO:Te, ZnO:N, and film with different nitrogen flow and tellurium flux.

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/content/aip/journal/jap/108/9/10.1063/1.3498800
2010-11-10
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3498800
10.1063/1.3498800
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