Polarization (left) and in-plane strain (right) vs cycled electric field for a PMN–28%PT crystal at room temperature. The resistance of a LSMO/PMN–PT(001) film was calibrated (see text) to record the in-plane strain of the substrate.
Temperature dependences of both, remanent polarization and coercive field .
Series of field-dependent polarization (left) and resistance (right) data recorded for unipolar field cycles of at various temperatures after positive poling. The curves are shifted vertically for better clarity. Arrows indicate the phase transitions. The change in the LSMO/PMN–28%PT film resistance directly tracks the in-plane strain.
Polarization (left) and resistance change in the LSMO film (right) measured at 415 K, i.e., 13 K above the Curie temperature.
Electric field-temperature phase diagram of a poled PMN–28%PT single crystal . , , , and denote the monoclinic phases and , the tetragonal and the cubic phase.
Zero-field-heating dielectric permittivity for a PMN–28%PT crystal in both, poled and unpoled state.
Time-dependent current response to a stepwise increased electric field applied to an unpoled PMN–28%PT crystal.
Temperature dependence of the piezoelectric in-plane-strain measured as the contraction of the sample length under an applied electric field of 30kV/cm . The absolute value is shown on the left scale and the value normalized to the room temperature value on the right scale.
Time dependence of the lattice parameter at 90 K. The applied electric field is changed stepwise from 10 to −6 kV/cm and back to 6 kV/cm. The horizontal line marks the original parameter after the cooling procedure.
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