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Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers
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10.1063/1.3503435
/content/aip/journal/jap/108/9/10.1063/1.3503435
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3503435

Figures

Image of FIG. 1.
FIG. 1.

A schematic band gap diagram of the bilayer structure. The GaInAsN serves as the electrons well and the GaAsSbN as the holes well.

Image of FIG. 2.
FIG. 2.

Simulated room temperature energy band diagrams and fundamental hole and electron wave functions, for samples S1–S4. The 77 K gap values can be approximated from the room temperature values shown above by the addition of GaAs band gap shift between the two temperatures .

Image of FIG. 3.
FIG. 3.

(a) PL spectra at 77 K taken from the ALE-grown GaInAsN 12 Å QW (S1), the same layer followed by a or GaAsSbN thin layer to form a 14 Å GaInAsN–GaAsSbN (S2) and 18 Å (S3) thick GaInAsN–GaAsSbN thin bilayer QW structures, respectively. (S4); 18 Å GaInAsN–GaAsSbN bilayer with an additional 12 Å GaInAsN ALE-grown top layer to form a 30 Å GaInAsN–GaAsSbN–GaInAsN W-shape QW structure. (b) In, Sb, and N concentration profiles deduced from TOF-SIMS measurement for sample (S3); 18 Å thick GaInAsN–GaAsSbN thin bilayer structure.

Image of FIG. 4.
FIG. 4.

(a) Schematic band gap structure for sample S5 (56 Å GaInAsN/GaAs QW) and calculated effective barrier heights for electrons and holes. (b) Schematic band gap structure for sample S3 (18 Å bilayer QW structure) and calculated effective barrier heights for electrons and holes. [(c) and (d)] Plots of integrated PL intensity vs inverse temperature (triangles) for samples S5 (GaInAsN/GaAs QW) and S3 (bilayer QW structure), respectively. The dashed lines depict the best fits of Eq. (1) to the data.

Image of FIG. 5.
FIG. 5.

(a) The electron and hole thermionic escape lifetimes for sample S3 (bilayer structure) and S5 (reference GaInAsN QW). (b) Schematic SPSL band gap structure and calculated e1 to hh1 transition energy and effective barrier heights for electrons and holes. (c) Gain calculation for the SPSL with respect to a reference of equal thickness GaInAs/GaAs QW.

Image of FIG. 6.
FIG. 6.

(a) The electron and hole thermionic escape lifetimes for the proposed SPSL. (b) Schematic SPSL band gap structure and calculated e1 to hh1 transition energy and effective barrier heights for electrons and holes. (c) Gain calculation for the SPSL with respect to a reference of equal thickness GaInAs/GaAs QW.

Tables

Generic image for table
Table I.

Compositions, lattice constants, lattice mismatches, and strain for layers grown in this study, and for the calculated SPSL structure [Fig. 5(b)]. The SPSL lattice constant was calculated as a weighted average between its components (GaInAsN/GaAsSbN/GaAs). The layer presented here for comparison.

Generic image for table
Table II.

Layer compositions, lattice constants, lattice mismatches, and strain for the proposed SPSL structure presented in Fig. 6(b).

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/content/aip/journal/jap/108/9/10.1063/1.3503435
2010-11-10
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved hole confinement in GaInAsN–GaAsSbN thin double-layer quantum-well structure for telecom-wavelength lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3503435
10.1063/1.3503435
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