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Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes
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10.1063/1.3504193
/content/aip/journal/jap/108/9/10.1063/1.3504193
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3504193
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Doping structure of (a) exponential-doping sample and (b) uniform-doping sample grown by MBE.

Image of FIG. 2.
FIG. 2.

Diagram of the t-mode GaAs photocathode module.

Image of FIG. 3.
FIG. 3.

ECV profiling of carrier concentration in (a) exponential-doping sample and (b) uniform-doping sample grown by MBE.

Image of FIG. 4.
FIG. 4.

Photocurrent evolution of the exponential-doping sample and uniform-doping sample during the initial stage of Cs activation.

Image of FIG. 5.
FIG. 5.

Photocurrent evolution of the exponential-doping sample and uniform-doping sample during the (Cs and O) activation.

Image of FIG. 6.
FIG. 6.

Spectral response curves of the samples with two different structures.

Image of FIG. 7.
FIG. 7.

Band structure and surface potential barrier of the exponential-doping t-mode GaAs photocathode. is the conduction-band minimum, is the valence band maximum, is the band gap, is the Fermi level, is the vacuum level, and and are the height and width of the surface BBR.

Image of FIG. 8.
FIG. 8.

Schematic diagram of the electron-capture center round acceptor impurity.

Image of FIG. 9.
FIG. 9.

Experimental (solid lines) and theoretical (dashed lines) quantum yield curves. Curves 1 and represent the exponential-doping sample; curves 2 and represent the uniform-doping sample.

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/content/aip/journal/jap/108/9/10.1063/1.3504193
2010-11-04
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of exponential-doping structure on photoemission capability of transmission-mode GaAs photocathodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/9/10.1063/1.3504193
10.1063/1.3504193
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