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Anomalies in electron spin resonance spectra of diluted magnetic semiconductors
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Image of FIG. 1.
FIG. 1.

Magnetization hysteresis loops for (; ; ) at . On the insets: left-the typical XRD patterns of powder samples illustrating two crystal phases observed under variation in manganese content ; right-the temperature dependence of the inverse susceptibility , corrected by the temperature-independent contribution, above and the square of the magnetization below for indicating the independent determination of the Curie–Weiss temperature and the FM transition temperature .

Image of FIG. 2.
FIG. 2.

Typical temperature evolution of the first derivative absorption line for the samples [(a) (nonoriented single crystal); (b) (powder)]: black points—experimental data, solid lines—fits in the frame of Dyson’s theory [Eq. (2)]. Intensity of ESR signal decreases with increase in the temperature. The inset represents an example of fitting along with two resolved lines: dashed one corresponds to broad component, while dotted one—to narrow line.

Image of FIG. 3.
FIG. 3.

Temperature dependencies of the effective -factor (a) and linewidth (b) derived from one-line fitting (low temperature range) and two-line fitting [Eq. (2)] for broad and narrow components of ESR spectra in powder samples of different alloy composition: ; ; ; . Solid curves are approximations in the framework of modified Huber’s theory [Eq. (3)]. Dotted and solid lines are guides for eyes. On the inset-concentration dependence of the linewidth for broad and narrow components of ESR spectra at two different temperatures (, ).


Generic image for table
Table I.

Parameters of modified Huber’s theory [Eq. (3)] for two spectral components in along with magnetization data on FM ordering temperature and paramagnetic Curie–Weiss temperature . Indexes 1 and 2 correspond to broad and narrow components of the ESR spectra, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalies in electron spin resonance spectra of Ge1−xMnxTe diluted magnetic semiconductors