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Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation
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10.1063/1.3506420
/content/aip/journal/jap/109/1/10.1063/1.3506420
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3506420
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Theoretical curve calculated from the equilibrium critical thickness assumption (solid line), compared with the XRD-measured strain vs SGOI thickness (data points).

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images showing planar defects on {111} planes from SGOI films fabricated under conditions, (a) , , 20 min anneal in dry , and top was etched to 50 nm before , 90 min dry oxidation (b) , 2 h 50 min anneal in dry . SiGe films have average Ge compositions of (a) 0.71 and (b) 0.81. Black arrows indicate the positions of SFs. BOX stands for buried and on the top of SiGe is the grown by selective thermal oxidation of SiGe layer.

Image of FIG. 3.
FIG. 3.

High resolution cross-sectional TEM image of intrinsic SFs, which are caused by motion of 30° partial dislocations through the SGOI layer .

Image of FIG. 4.
FIG. 4.

Comparison between the residual strain XRD data (data points) and theoretical curves showing the maximum biaxial compressive strain of SGOI films with given SGOI thicknesses calculated from equilibrium theory assuming that strain is relaxed by 60° perfect dislocations (black dotted line) and 30° partial dislocations (red solid line).

Image of FIG. 5.
FIG. 5.

AFM image with cross-hatched patterns from oxidized SGOI samples at (a) for 2 h 50 min and (b) , , 30 min. Average Ge compositions (atomic fractions) of these samples were (a) 0.81 and (b) 0.55.

Image of FIG. 6.
FIG. 6.

Buckling of SiGe layers observed by cross-sectional TEM in the sample dry oxidized for , 2 h 50 min (a) and the layers containing SFs near the inflection points of the buckling undulations (b).

Image of FIG. 7.
FIG. 7.

Calculated curves showing the buckling rates of SGOI layers vs wavenumber based on a double viscous layer model. The black dotted line assumes a SiGe layer with Ge atomic fraction 0.18 and 39 nm thickness. The red solid line assumes a SiGe layer with Ge atomic fraction 0.81 and 8.7 nm thickness. Both lines assume inert gas (nonoxidative) annealing at for 2 h and 50 min.

Image of FIG. 8.
FIG. 8.

Bright field plan view TEM image of corrugated SGOI layers oxidized in dry at , , 30 min. The incident beam was close to the [100] zone axis.

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/content/aip/journal/jap/109/1/10.1063/1.3506420
2011-01-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3506420
10.1063/1.3506420
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