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Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation
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10.1063/1.3506420
/content/aip/journal/jap/109/1/10.1063/1.3506420
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3506420
/content/aip/journal/jap/109/1/10.1063/1.3506420
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/content/aip/journal/jap/109/1/10.1063/1.3506420
2011-01-14
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relaxation mechanisms in compressively strained thin SiGe-on-insulator films grown by selective Si oxidation
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3506420
10.1063/1.3506420
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