The valence and conduction band edges for the QW heterostructure as functions of the -coordinate. The static magnetic and electric fields are oriented perpendicular and parallel to the QW plane .
Reflectivity for a quantum-well heterostructure under the action of a transverse magnetic field of 14 T, at zero electric field . The thicknesses of the cap layer , the QW , and the buffer layer used here are, respectively, 200 Å, 50 Å, and 500 Å. Solid (dotted) line was calculated without (with) considering the Coulomb and image potentials.
Reflectivity for the same QW heterostructure as in Fig. 2, at and different values of the ratio between electric and magnetic lengths: 0 (a), 0.25 (b), 0.5 (c), 1 (d), (e), and 2 (f). The calculations were carried out without considering the potential [Eq. (9)].
Magnetoexcitonic reflectivity for the QW heterostructure as in Figs. 2 and 3, at and a ratio [Eq. (43)]: 0.5 (upper panel), 2 (lower panel). Solid (dotted) lines were calculated without (with) considering the potential [Eq. (9)].
Magnetoexcitonic reflectivity for QW heterostructure at and a ratio between electric and magnetic lengths. The solid (dotted) line was calculated with a cap-layer thickness equal to 30 (200) Å. Other parameters used are the same as for the QW heterostructure of Fig. 4.
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