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Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
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10.1063/1.3525599
/content/aip/journal/jap/109/1/10.1063/1.3525599
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3525599

Figures

Image of FIG. 1.
FIG. 1.

(a) Nomarski micrograph of films grown on GaAs with and a top layer composition of . Vertical lines are FTs formed during growth with . SEM images of trenches on layers (b) from plan-view and (c) cross-sectional view. A depth of 100–300 nm is measured for these FTs.

Image of FIG. 2.
FIG. 2.

(a) Nomarski micrograph of a graded buffer grown on GaAs with , , and top layer composition of . (b) AFM micrograph showing surface RMS roughness of 2.45 nm.

Image of FIG. 3.
FIG. 3.

Threading dislocations observed by (a) PVTEM and (b) CL on tensile-strained buffers. Both PVTEM and CL comfirmed a TDD of for .

Image of FIG. 4.
FIG. 4.

(a) XTEM micrograph of a microtwin found below all FTs. (b) PVTEM of FT showing dislocation pileups caused by FTs.

Image of FIG. 5.
FIG. 5.

Nomarski micrographs of graded buffers with a top layer composition of , , and of (a) 4% and (b) 2%. decreased from to by halving .

Image of FIG. 6.
FIG. 6.

(a) Nomarski and (b) AFM micrographs of a compressively-strained buffer with a top layer composition of with . A smooth morphology, with no FTs was observed, and a surface RMS roughness of was extracted from AFM.

Image of FIG. 7.
FIG. 7.

(a) PVTEM , and (b) CL micrographs of compressively-strained buffers. The PVTEM survey showed while the CL showed .

Image of FIG. 8.
FIG. 8.

Normalized room temperature PL of metamorphic films grown on with different In compositions.

Image of FIG. 9.
FIG. 9.

XTEM of a lattice-matched layer on top of on GaAs. Threading dislocations are not formed at the interface. Insets at right show selected area diffraction patterns of the layer along both [011] and and show no evidence of CuPt ordering.

Image of FIG. 10.
FIG. 10.

(a) L-IV characteristics under approximate AM1.5G illumination and (b) EQE measurements of solar cells with 39% (—), 43% (– –), and 48% (- - -) In content. trends up with decreasing In content. Inset of (a) depicts solar cell growth structure.

Tables

Generic image for table
Table I.

Summary of solar cell device characteristics.

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/content/aip/journal/jap/109/1/10.1063/1.3525599
2011-01-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3525599
10.1063/1.3525599
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