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A metal-metal Fabry–Pérot cavity photoconductor for efficient GaAs terahertz photomixers
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10.1063/1.3525709
/content/aip/journal/jap/109/1/10.1063/1.3525709
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3525709
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of (a) the FP cavity photoconductor and (b) the large area photoconductors on the LT-GaAs bevel.

Image of FIG. 2.
FIG. 2.

Scanning electron microscope picture of the VRP.

Image of FIG. 3.
FIG. 3.

Measured photocurrent as function of bias voltage with an optical power for thicknesses , 0.27, 0.28, 0.31, 0.34, 0.37, 0.39, 0.50, 0.70, 0.89, 0.99, 1.10, and 1.32 .

Image of FIG. 4.
FIG. 4.

Theoretical (solid line) and experimental (in squares) reponsivities as a function of LT-GaAs layer thickness. In the inset is shown the transient differential photoreflectivity measured at on the LT-GaAs layer.

Image of FIG. 5.
FIG. 5.

Bias voltage dependences of the photocurrent for a -diameter photoconductor for incident optical power , 78, 104, and 130 mW.

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/content/aip/journal/jap/109/1/10.1063/1.3525709
2011-01-04
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A metal-metal Fabry–Pérot cavity photoconductor for efficient GaAs terahertz photomixers
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3525709
10.1063/1.3525709
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