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Schematic view of (a) the FP cavity photoconductor and (b) the large area photoconductors on the LT-GaAs bevel.
Scanning electron microscope picture of the VRP.
Measured photocurrent as function of bias voltage with an optical power for thicknesses , 0.27, 0.28, 0.31, 0.34, 0.37, 0.39, 0.50, 0.70, 0.89, 0.99, 1.10, and 1.32 .
Theoretical (solid line) and experimental (in squares) reponsivities as a function of LT-GaAs layer thickness. In the inset is shown the transient differential photoreflectivity measured at on the LT-GaAs layer.
Bias voltage dependences of the photocurrent for a -diameter photoconductor for incident optical power , 78, 104, and 130 mW.
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