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Reassessment of the impedance spectra and dielectric responses of undoped and -doped
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10.1063/1.3527926
/content/aip/journal/jap/109/1/10.1063/1.3527926
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3527926

Figures

Image of FIG. 1.
FIG. 1.

Frequency dependence of the complex dielectric constants of real part and imaginary part for undoped [(a) and (b)] and -doped CCTO [(c) and (d)] at different temperatures.

Image of FIG. 2.
FIG. 2.

Comparison of the simulation by an equivalent circuit model with series combination of parallel RC elements and experimental measured impedance spectra of (a) undoped and (b) -doped CCTO at , showing a very good agreement. (The arrows indicate the selected frequencies and the insets reveal expanded views of the high-frequency data close to the origin.)

Image of FIG. 3.
FIG. 3.

Arrhenius plots of (: resistivity) vs 1/T (T: temperature) of (a) undoped and (b) -doped CCTO.

Image of FIG. 4.
FIG. 4.

Arrhenius plots of (: resistivity) vs 1/T (T: temperature) of contact resistivity (dc case) of -doped CCTO with In–Ga electrode.

Image of FIG. 5.
FIG. 5.

Comparison of the simulation results modeled by an equivalent circuit with series combination of parallel RC elements and experimental data concerning the dielectric relaxation spectra of and for undoped [(a) and (b)] and -doped CCTO [(c) and (d)] at , showing a very good agreement.

Image of FIG. 6.
FIG. 6.

Demonstration that the dielectric relaxation spectra can be described by the extended MW two-layer condenser model: along red dashed line tracks for undoped CCTO: (a) following the order of and (b) and for -doped CCTO: (c) following the order of , , and (d). The arrows shown in (b) and (d) indicate the corresponding frequencies of the relaxation times .

Image of FIG. 7.
FIG. 7.

Proving the decline of the low-frequency plateaus with increasing temperatures for -doped CCTO with In–Ga electrode by using the data of the grain boundaries and electrode contacts as per Eq. (3).

Image of FIG. 8.
FIG. 8.

Schematic of proposed defect structure for the formation of insulating grain boundary. The spatial distribution of these defects remains extremely narrow and they behave essentially as a two-dimensional layer of acceptor states (gb: grain boundary).

Tables

Generic image for table
Table I.

The obtained values of , , and from the fitting of an equivalent circuit model with series combination of 3 parallel RC elements for undoped CCTO at different temperatures. [i: grain interiors (1), subgrain boundaries (2), and grain boundaries (3)].

Generic image for table
Table II.

The obtained values of , , and from the fitting of an equivalent circuit model with series combination of 4 parallel RC elements for -doped CCTO at different temperatures. [i: grain interiors (1), grain boundaries (2), electrode contacts (3), and subgrain boundaries (4)].

Generic image for table
Table III.

The relaxation times of undoped and -doped CCTO, revealed in Figs. 6(b) and 6(d), respectively.

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/content/aip/journal/jap/109/1/10.1063/1.3527926
2011-01-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reassessment of the impedance spectra and dielectric responses of undoped and CaSiO3-doped CaCu3Ti4O12
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/1/10.1063/1.3527926
10.1063/1.3527926
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