(Color online) Magnetic phase diagram of MnP single crystals [adapted from Reis et al. (Ref. 7 )] for applied magnetic fields along hard axis a, intermediate axis b, and easy axis c of the MnP structure (Pbnm). SCR = screw phase. The vertical lines indicate the different transition temperatures. T LP: Lifshitz point temperature.
(Color online) Field cooled magnetization at 1000 Oe vs temperature of a GaP:MnP epilayer (red dots), a MnP film (blue open circles), and powder MnP (gray line, scale on the right). Lower panel: derivatives of the magnetization curves. The dashed lines signal the transition temperatures.
(Color online) Magnetization cycles of MnP powder (a), MnP film (b), and GaP:MnP (c), at four temperatures. Continuous lines correspond to 5 K. The arrows indicate field induced magnetic transitions.
(Color online) Comparison of the magnetization cycles of MnP and GaP:MnP films for two temperatures (5 and 130 K) and two perpendicular directions of the magnetic field, both in the plane of the samples showing the in-plane anisotropy.
(Color online) (a) Coercive fields of two GaP:MnP epilayers grown at 650 °C for the three orientations schematized: magnetic field (H) in the film plane in two perpendicular directions (circles) and H perpendicular to the film plane (horizontal segment). The values for the MnP (poly-c) film (Film) for both in-plane directions are also shown (stars). Continuous lines are guides to the eye. (b) GaP:MnP epilayer magnetization derivatives (FC, 1000 Oe) with the critical temperatures indicated as dashed vertical lines.
(Color online) (a) Diffraction intensity of a MnP film grown on GaP (001) (dotted line) and fitted pattern for polycrystalline MnP (blue line). The intensity of the (220) peak in the fit has been normalized to that of the film. GaP (200) and (400) diffraction peaks are indicated. (b) Zoom of the region of the main MnP peaks showing the different intensities compared to powder samples (Pbnm setting with a > b > c). Three preferential orientations are labeled: (010) with an asterisk, (111) with A, and (110) with B. (c) Image of the diffracted intensity (in logarithmic scale) of a region of the reciprocal space.
(Color online) (a) Mn K edge absorption spectra of a metallic Mn foil, Mn3O4 oxide, and several GaP:MnP epilayers (A, B, and C) compared to the MnP film. (b) Weighted Fourier transform of the data. (c) Filtered EXAFS signals (symbols) and fits (lines), and (d) modulus and imaginary parts of the filtered Fourier transform of the data (symbols) and fits (lines) (fitted window: 1–3 Å).
(Color online) Right side: bottom, two Mn–P distances (circles and squares) and their mean value (triangles) and the difference between both Mn–P distances (top) obtained from the EXAFS fits as a function of the samples ordered according to their Debye–Waller factors. Left side: equivalent averaged distances obtained from diffraction for bulk and MnP film. The dashed horizontal lines correspond to the four Mn–P crystallographic distances and the numbers on the extreme left side indicate the number of pairs at each distance.
(Color online) Projections perpendicular to the sample surface of MnP on GaP with MnP (001) axis parallel to GaP (110) showing different possible stacking of GaP and MnP. Both compounds present alternating layers of Ga and P for GaP and of Mn and P for MnP.
Distances (di ) and number of neighbors (Ni ) in MnP thin film and in MnP nanocrystals from three GaP:MnP films obtained from EXAFS fits. S0 2 = 0.8 for the whole series, is determined by the MnP film taken as reference. The estimated errors in di are between 1% and 2%. Φ indicates the MCTMn gas flow rate measured in μmol min−1.
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