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Fluorine effect on As diffusion in Ge
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10.1063/1.3592962
/content/aip/journal/jap/109/11/10.1063/1.3592962
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3592962

Figures

Image of FIG. 1.
FIG. 1.

Concentration profiles of F (lines with circles) and As (lines without circles) in the samples co-implanted with F, (a) and (b), respectively, and As (lines) in the reference samples without F (c), just after the implantations (straight lines) and after annealing for 1 h at 400 °C (dashed-dotted lines), 450 °C (straight thick lines), 500 °C (dashed lines), or 600 °C (dotted lines). The vertical rectangle indicates the region containing the band of EOR defects, which are present in the sample enriched with F up to the temperatures of 450 °C.

Image of FIG. 2.
FIG. 2.

TEM cross section views of the samples co-implanted with F and As just after the implantations (a) and after annealing for 1 h at 400 °C (b), 450 °C (c), or 500 °C (d).

Tables

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Table I.

Binding energies Eb (eV) for clusters formed between V, Gei, As substitutional atoms, and F interstitials in Ge.

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/content/aip/journal/jap/109/11/10.1063/1.3592962
2011-06-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fluorine effect on As diffusion in Ge
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3592962
10.1063/1.3592962
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