Concentration profiles of F (lines with circles) and As (lines without circles) in the samples co-implanted with F, (a) and (b), respectively, and As (lines) in the reference samples without F (c), just after the implantations (straight lines) and after annealing for 1 h at 400 °C (dashed-dotted lines), 450 °C (straight thick lines), 500 °C (dashed lines), or 600 °C (dotted lines). The vertical rectangle indicates the region containing the band of EOR defects, which are present in the sample enriched with F up to the temperatures of 450 °C.
TEM cross section views of the samples co-implanted with F and As just after the implantations (a) and after annealing for 1 h at 400 °C (b), 450 °C (c), or 500 °C (d).
Binding energies Eb (eV) for clusters formed between V, Gei, As substitutional atoms, and F interstitials in Ge.
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