1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
Rent:
Rent this article for
USD
10.1063/1.3592978
/content/aip/journal/jap/109/11/10.1063/1.3592978
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3592978

Figures

Image of FIG. 1.
FIG. 1.

and data of Si heterostructures as a function of the branch-point energies of the semiconductors. The dashed and dash-dotted lines, respectively, are the linear least-squares fits to the respective data points. The solid line is the prediction of the IFIGS theory using Tersoff’s (Ref. 9) p-type branch-point energy 0.36 eV.

Image of FIG. 2.
FIG. 2.

data of AlN, GaN, and InN heterostructures as a function of the branch-point energies of the semiconductors. The dashed lines are the linear least-squares fits to the respective data points. YSZ stands for yttria-stabilized zirconia.

Image of FIG. 3.
FIG. 3.

data of MgO and ZnO heterostructures as a function of the branch-point energies of the semiconductors. The dashed lines are the linear least-squares fits to the respective data points.

Image of FIG. 4.
FIG. 4.

data of Al2O3 and In2O3 heterostructures as a function of the branch-point energies of the semiconductors. The dashed lines are the linear least-squares fits to the respective data points.

Image of FIG. 5.
FIG. 5.

Flat-band barrier heights as a function of temperature and effective barrier heights as a function of the ideality factors at different temperatures between 300 and 480K of one Pt/n-GaN diode. Data from Ref. 149. The dashed lines are the linear least-squares fit to the corresponding data points.

Image of FIG. 6.
FIG. 6.

Barrier heights of laterally homogeneous GaN Schottky contacts as a function of the difference of the metal and GaN electronegativities. □, , , and data points represent I/V, C/V, XPS, and IPEYS results, respectively. The dashed line is the linear least-squares fit to the experimental data. The MIGS line is drawn with  = 2.37 eV (♦ data point), from Ref. 12, and S X = 0.29 eV/Miedema-unit.

Image of FIG. 7.
FIG. 7.

Barrier heights of laterally homogeneous MgO Schottky contacts as a function of the difference of the metal and MgO electronegativities. , , , and □ data points are from Ref. 180, Ref. 181, Ref. 113 and Refs. 182–184, respectively. The dashed line is the linear least-squares fit to the experimental data. The MIGS line is drawn with  = 3.92 ± 0.31 eV (♦ data point), see Table I, and S X = 0.66 eV/Miedema unit.

Image of FIG. 8.
FIG. 8.

Valence-band offsets of Si heterostructures as a function of the branch-point energies of the semiconductors. The dashed line is the linear least-squares fit to the data points. The dash-dotted line is the prediction of the IFIGS theory without the electric-dipole term using Tersoff’s (Ref. 9) p-type branch point energy 0.36 eV.

Tables

Generic image for table
Table I.

Empirical slope parameters ϕ vbo and values determined from Figs. 1–4 and p-type branch-point energies calculated by Tersoff (Ref. 9), Mönch (Ref. 12 and 188) Schleife et al. (Ref. 17), Höffling et al. (Ref. 18) and Robertson et al. (Ref. 14–16).

Generic image for table
Table II.

Empirical slope parameters S X and values from Ref. 6 and Figs. 1–4, 7, and 8.

Generic image for table
Table III.

Empirical and calculated p-type branch point energies of insulators in eV.

Loading

Article metrics loading...

/content/aip/journal/jap/109/11/10.1063/1.3592978
2011-06-15
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3592978
10.1063/1.3592978
SEARCH_EXPAND_ITEM