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Defect levels of semi-insulating CdMnTe:In crystals
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10.1063/1.3594715
/content/aip/journal/jap/109/11/10.1063/1.3594715
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3594715

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical DLTS spectra of Bridgman-grown detector-grade crystals (a) CdZnTe:In and (b) CdMnTe:In.

Image of FIG. 2.
FIG. 2.

(Color online) PL spectra of CMT, CMT:In, and CZT:In crystals between 0.5- and 1.7-eV. Indium-doped CMT and CZT crystals exhibit very strong A-center peaks and donor-bound exciton () peaks, which are typical properties of doped materials.

Image of FIG. 3.
FIG. 3.

Typical SWXBT image of (a) CMT:In and (b) commercial CZT samples. There are many subgrain/low angle grain boundaries (SBs), TI (tellurium inclusions) induced defects, and screw dislocations (SDs).

Image of FIG. 4.
FIG. 4.

SEM image of a chemically etched CZT sample. The density of dislocations is very high around Te inclusions, compared to areas of the matrix that are free from them.

Image of FIG. 5.
FIG. 5.

Proposed model of trap levels in CMT:In material.

Tables

Generic image for table
Table I.

Summary of PL emission band at 4.2 K in CMT, CMT:In, and CZT:In samples.

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/content/aip/journal/jap/109/11/10.1063/1.3594715
2011-06-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect levels of semi-insulating CdMnTe:In crystals
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3594715
10.1063/1.3594715
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