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Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate
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10.1063/1.3596521
/content/aip/journal/jap/109/11/10.1063/1.3596521
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3596521
/content/aip/journal/jap/109/11/10.1063/1.3596521
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/content/aip/journal/jap/109/11/10.1063/1.3596521
2011-06-15
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/11/10.1063/1.3596521
10.1063/1.3596521
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