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A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
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10.1063/1.3537746
/content/aip/journal/jap/109/2/10.1063/1.3537746
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3537746
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Self-energy diagrams, within the multiple scattering approximation, and the Dyson equation for the averaged GF.

Image of FIG. 2.
FIG. 2.

Typical SDF for localized states (like that with energy ) and extended states (like that with energy ).

Image of FIG. 3.
FIG. 3.

Charge distribution across the -direction for and .

Image of FIG. 4.
FIG. 4.

Resistivity as a function of the average magnetization for fixed carrier density. The scale is chosen in such a way that the temperature corresponding to a given magnetization grows to the right. The inset shows the index of the subband containing the Fermi level.

Image of FIG. 5.
FIG. 5.

Dependence of the ratio with for three different samples; sample no. 1: and ; sample no. 2: and ; sample no. 3: and .

Image of FIG. 6.
FIG. 6.

Total resistivity as a function of temperature for the three samples described above.

Image of FIG. 7.
FIG. 7.

Schematic classification of samples as metallic or nonmetallic. The downward (upward) arrow indicates the antialigned (aligned) spin impurity band and its corresponding mobility edge. The Fermi levels lies, in this case, to the left of the antialigned mobility edge and the sample is nonmetallic in the whole range of average magnetization.

Image of FIG. 8.
FIG. 8.

As before, but the Fermi level is kept to the right of the antialigned mobility edge, even as goes to zero. This is the case of a sample which is metallic for the whole range of the magnetization.

Image of FIG. 9.
FIG. 9.

As before, in this case the mobility edge lies to the right of the antialigned mobility edge at , but crosses to its left as goes to zero.

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/content/aip/journal/jap/109/2/10.1063/1.3537746
2011-01-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3537746
10.1063/1.3537746
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