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Defect modification and energy extraction in a one-dimensional terahertz photonic crystal
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10.1063/1.3537824
/content/aip/journal/jap/109/2/10.1063/1.3537824
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3537824
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup for THz-TDS.

Image of FIG. 2.
FIG. 2.

Waveform (a) and frequency spectrum (b) of the THz pulse transmitted through a 1 mm-thick BK7 glass. For comparison, the waveform and frequency spectrum of the reference pulse (i.e., the pulse transmitted through air) are also plotted.

Image of FIG. 3.
FIG. 3.

(a) Refractive index and (b) absorption coefficient of the BK7 glass derived from THz-TDS by using Eqs. (1)–(4).

Image of FIG. 4.
FIG. 4.

Experimental observation (a) and numerical simulation result (b) for the evolution of the transmission spectrum of the 1D PC with increasing size of the defect. corresponds to a perfect PC without a defect.

Image of FIG. 5.
FIG. 5.

Schematic showing the modification of the defect mode of the 1D PC with the insertion of a silicon wafer.

Image of FIG. 6.
FIG. 6.

Experimental observation (a) and numerical simulation result (b) for the evolution of the transmission spectrum of the 1D PC with a defect with the change in the position of the inserted silicon wafer whose resistivity is .

Image of FIG. 7.
FIG. 7.

Electric field distribution in the defect before (a) and after (b) the complete insertion of the silicon wafer into the defect.

Image of FIG. 8.
FIG. 8.

Electric field distributions of the defect modes at 0.31 THz (a) and 0.29 THz (b) when the front end of the silicon wafer was located at the center of the THz beam.

Image of FIG. 9.
FIG. 9.

Dependence of the normalized powers detected by three monitors which are placed just behind the PC (monitor 1), and on the right (monitor 2) and left (monitor 3) sides of the defect. The coupling efficiency of the THz wave into the silicon wafer is indicated by monitor 2.

Image of FIG. 10.
FIG. 10.

Electric field distributions of the defect modes when the front end of the silicon wafer was located at (a) and (b) .

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/content/aip/journal/jap/109/2/10.1063/1.3537824
2011-01-19
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect modification and energy extraction in a one-dimensional terahertz photonic crystal
http://aip.metastore.ingenta.com/content/aip/journal/jap/109/2/10.1063/1.3537824
10.1063/1.3537824
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