Experimental setup for THz-TDS.
Waveform (a) and frequency spectrum (b) of the THz pulse transmitted through a 1 mm-thick BK7 glass. For comparison, the waveform and frequency spectrum of the reference pulse (i.e., the pulse transmitted through air) are also plotted.
(a) Refractive index and (b) absorption coefficient of the BK7 glass derived from THz-TDS by using Eqs. (1)–(4).
Experimental observation (a) and numerical simulation result (b) for the evolution of the transmission spectrum of the 1D PC with increasing size of the defect. corresponds to a perfect PC without a defect.
Schematic showing the modification of the defect mode of the 1D PC with the insertion of a silicon wafer.
Experimental observation (a) and numerical simulation result (b) for the evolution of the transmission spectrum of the 1D PC with a defect with the change in the position of the inserted silicon wafer whose resistivity is .
Electric field distribution in the defect before (a) and after (b) the complete insertion of the silicon wafer into the defect.
Electric field distributions of the defect modes at 0.31 THz (a) and 0.29 THz (b) when the front end of the silicon wafer was located at the center of the THz beam.
Dependence of the normalized powers detected by three monitors which are placed just behind the PC (monitor 1), and on the right (monitor 2) and left (monitor 3) sides of the defect. The coupling efficiency of the THz wave into the silicon wafer is indicated by monitor 2.
Electric field distributions of the defect modes when the front end of the silicon wafer was located at (a) and (b) .
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